GLA2N70 Datasheet, PDF (1/5 Pages) GTM CORPORATION – N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Pb Free Plating Product
ISSUED DATE :2005/09/14
REVISED DATE :
GLA2N70
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS
RDS(ON)
ID
675V
10
0.2A
Description
The GLA2N70 provide the designer with the best combination of fast switching, low on-resistance and
cost-effectiveness.
Features
*Dynamic dv/dt Rating
*Simple Drive Requirement
*Repetitive Avalanche Rated
*Fast Switching
Package Dimensions
SOT-223
REF.
A
C
D
E
I
H
Millimeter
Min. Max.
6.70 7.30
2.90 3.10
0.02 0.10
0̓
10̓
0.60 0.80
0.25 0.35
REF.
B
J
1
2
3
4
5
Millimeter
Min. Max.
13̓TYP.
2.30 REF.
6.30 6.70
6.30 6.70
3.30 3.70
3.30 3.70
1.40 1.80
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain Current, V_GS@5V
I_D @TC=25к
Continuous Drain Current, V_GS@5V
Pulsed Drain Current¹
I_D @TC=100к
I_DM
Total Power Dissipation
P_D @TC=25к
Linear Derating Factor
Single Pulse Avalanche Energy²
E_AS
Avalanche Current
I_AR
Repetitive Avalanche Energy
E_AR
Operating Junction and Storage Temperature Range Tj, Tstg
Ratings
675
f30
0.2
0.13
0.5
1.13
0.01
0.5
1
0.5
-55 ~ +150
Unit
V
V
A
A
A
W
W/ć
mJ
A
mJ
ć
Thermal Data
Parameter
Thermal Resistance Junction-ambient
Max.
Symbol
Rthj-a
Value
110
Unit
ć/W
GLA2N70
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