GL6718 Datasheet, PDF (1/2 Pages) GTM CORPORATION – NPN EPITAXIAL PLANAR TRANSISTOR

CORPORATION ISSUED DATE :2004/12/17
REVISED DATE :
GL6718
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The GL6718 is designed for general purpose medium power amplifier and switching.
Package Dimensions
SOT-223
Absolute Maximum Ratings at Ta = 25к
Parameter
Symbol
Junction Temperature
Tj
Storage Temperature
Collector to Base Voltage at Ta=25к
Collector to Emitter Voltage at Ta=25к
Emitter to Base Voltage at Ta=25к
Collector Current at Ta=25к
Total Power Dissipation at Ta=25к
Tstg
VCBO
VCEO
VEBO
IC
PD
REF.
A
C
D
E
I
H
Millimeter
Min. Max.
6.70 7.30
2.90 3.10
0.02 0.10
0̓
10̓
0.60 0.80
0.25 0.35
REF.
B
J
1
2
3
4
5
Millimeter
Min. Max.
13̓TYP.
2.30 REF.
6.30 6.70
6.30 6.70
3.30 3.70
3.30 3.70
1.40 1.80
Ratings
Unit
+150
ć
-55 ~ +150
ć
100
V
100
V
5.0
V
1.0
A
1.5
W
Characteristics at
Symbol
BVCBO
BVCEO
BVEBO
ICBO
*VCE(sat)
*hFE1
*hFE2
*hFE2
fT
Cob
Min.
100
100
5
-
-
80
100
20
50
-
Ta = 25к
Typ.
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
100
350
-
310
-
-
20
Unit
V
V
V
nA
mV
MHz
pF
Test Conditions
IC=100uA
IC=1mA
IE=10uA
VCB=80V
IC=350Ma, IB=35A
VCE=1V, IC=50mA
VCE=1V, IC=250mA
VCE=1V, IC=500mA
VCE=10V, IC=50mA, f=100MHz
VCB=10V, f=1MHz
*Pulse Test: Pulse WidthЉ380 s, Duty CycleЉ2%
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