GL4033 Datasheet, PDF (1/2 Pages) GTM CORPORATION – PNP EPITAXIAL PLANAR TRANSISTOR

CORPORATION ISSUED DATE :2003/09/17
REVISED DATE :2005/07/26B
GL4033
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The GL4033 is designed for high current general purpose amplifier applications.
Package Dimensions
SOT-223
REF.
A
C
D
E
I
H
Millimeter
Min. Max.
6.70 7.30
2.90 3.10
0.02 0.10
0̓
10̓
0.60 0.80
0.25 0.35
REF.
B
J
1
2
3
4
5
Millimeter
Min. Max.
13̓TYP.
2.30 REF.
6.30 6.70
6.30 6.70
3.30 3.70
3.30 3.70
1.40 1.80
Absolute Maximum Ratings (Ta = 25к,unless otherwise specified)
Parameter
Symbol
Ratings
Unit
Junction Temperature
Tj
+150
к
Storage Temperature Range
Tstg
-55 ~ +150
к
Collector to Base Voltage
VCBO
-80
V
Collector to Emitter Voltage
VCEO
-80
V
Emitter to Base Voltage
VEBO
-5
V
Collect Current(DC)
IC
-1
A
Total Power Dissipation
PD
2
W
Electrical Characteristics(Ta = 25к,unless otherwise specified)
Symbol
BVCBO
Min.
-80
Typ.
-
Max.
-
Unit
V
Test Conditions
IC=-10uA , IE=0
BVCEO
-80
-
-
V
IC=-10mA, IB=0
BVEBO
-5
-
-
V
IE=-10uA, IC=0
ICBO
-
-
-50
nA
VCB=-60V, IE=0
IEBO
-
-
-10
nA
VEB=-5V, IC=0
VCE(sat)1
-
-
-150
mV IC=-150mA, IB=-15mA
VCE(sat)2
-
-
-500
mV IC=-500mA, IB=-50mA
VBE(sat)1
-
-
-900
mV IC=-150mA, IB=-15mA
VBE(sat)2
-
-
-1.1
V
IC=-500mA, IB=-50mA
hFE1
75
-
-
VCE=-5V, IC=-0.1mA
hFE2
100
-
-
VCE=-5V, IC=-100mA
hFE3
70
-
-
VCE=-5V, IC=-500mA
hFE4
25
-
-
VCE=-5V, IC=-1A
fT
100
-
-
MHz VCE=-10V, IC=-50mA, f=100MHz
Cob
-
-
20
pF
VCB=-10V, IE=0, f=1MHz
* Pulse Test: Pulse WidthЉ380 s, Duty CycleЉ2%
GL4033
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