GL3904 Datasheet, PDF (1/2 Pages) GTM CORPORATION – NPN EPITAXIAL PLANAR TRANSISTO

CORPORATION ISSUED DATE :2005/06/02
REVISED DATE :
GL3904
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The GL3904 is designed for general purpose switching and amplifier applications.
Features
Ô¦Collector-Emitter Voltage: VCEO=40V
Ô¦Complementary to GL3906
Package Dimensions
SOT-223
REF.
A
C
D
E
I
H
Millimeter
Min. Max.
6.70 7.30
2.90 3.10
0.02 0.10
0̓
10̓
0.60 0.80
0.25 0.35
REF.
B
J
1
2
3
4
5
Millimeter
Min. Max.
13̓TYP.
2.30 REF.
6.30 6.70
6.30 6.70
3.30 3.70
3.30 3.70
1.40 1.80
Absolute Maximum Ratings (Ta = 25к,unless otherwise specified)
Parameter
Symbol
Ratings
Unit
Collector to Base Voltage
VCBO
60
V
Collector to Emitter Voltage
VCEO
40
V
Emitter to Base Voltage
VEBO
6
V
Collect Current(DC)
IC
200
mA
Junction Temperature
Tj
+150
ć
Storage Temperature Range
TsTG
-55 ~ +150
ć
Total Power Dissipation
PD
1.5
W
Electrical Characteristics(Ta = 25к,unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
60
-
-
V
IC=10uA, IE=0
BVCEO
40
-
-
V
IC=1mA, IB=0
BVEBO
6
-
-
V
IE=10uA, IC=0
ICEX
-
-
50
nA
VCE=30V, VBE=3V
*VCE(sat)1
-
-
200
mV
IC=10mA, IB=1mA
*VCE(sat)2
-
-
300
mV
IC=50mA, IB=5mA
*VBE(sat)1
650
-
850
mV
IC=10mA, IB=1mA
*VBE(sat)2
-
-
950
mV
IC=50mA, IB=5mA
*hFE1
40
-
-
VCE=1V, IC=0.1mA
*hFE2
70
-
-
VCE=1V, IC=1mA
*hFE3
100
-
300
VCE=1V, IC=10mA
*hFE4
60
-
-
VCE=1V, IC=50mA
*hFE5
30
-
-
VCE=1V, IC=100mA
fT
300
-
-
MHZ
VCE=20V, IC=10mA, f=100MHz
Cob
-
-
4
pF
VCB=5V, IE=0, f=1MHz
* Pulse Test: Pulse WidthЉ380 s, Duty CycleЉ2%
GL3904
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