GL2222A Datasheet, PDF (1/2 Pages) GTM CORPORATION – NPN EPITAXIAL PLANAR TRANSISTOR

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GL2222A
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The GL2222A is designed for General Purpose Amplifier and High-Speed Switching, Medium-Power Switching Applications.
Package Dimensions
Absolute Maximum Ratings at Ta = 25к
Parameter
Junction Temperature
Storage Temperature
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Symbol
Tj
Tstg
VCBO
VCEO
VEBO
IC
PD
Characteristics at Ta = 25к
Symbol
BVCBO
BVCEO
BVEBO
Min.
75
40
6
Typ.
-
-
-
Max.
-
-
-
ICBO
ICEX
IEBO
-
-
10
-
-
10
-
-
10
VCE(sat)1
VCE(sat)2
VBE(sat)1
-
-
500
-
-
1.0
-
-
1.2
VBE(sat)2
hFE1
hFE2
-
-
2.0
35
-
-
50
-
-
hFE3
hFE4
Hfe5
75
-
-
100
-
300
40
-
-
fT
300
-
-
REF.
A
C
D
E
I
H
Millimeter
Min. Max.
6.70 7.30
2.90 3.10
0.02 0.10
0̓
10̓
0.60 0.80
0.25 0.35
REF.
B
J
1
2
3
4
5
Millimeter
Min. Max.
13̓TYP.
2.30 REF.
6.30 6.70
6.30 6.70
3.30 3.70
3.30 3.70
1.40 1.80
Ratings
Unit
+150
ć
-55~+150
ć
75
V
40
V
6
V
600
mA
2
W
Unit
V
V
V
nA
nA
nA
mV
V
V
V
MHz
Test Conditions
IC=100uA , IE=0
IC=10mA,IB=0
IE=10uA ,IC=0
VCB=60V, IE=0
VCE=60V ,VEB(OFF)=3V
VEB=3V
IC=380mA, IB=10mA
IC=500mA, IB=50mA
IC=150mA, IB=15mA
IC=500mA, IB=50mA
VCE=10V, IC=100uA
VCE=10V, IC=1mA
VCE=10V, IC=10mA
VCE=10V, IC=150mA
VCE=10V, IC=500mA
VCB=20V, IC=20mA, f=100MHz