GL195A Datasheet, PDF (1/2 Pages) GTM CORPORATION – NPN SILICON PLANAR MEDIUM POWER TRANSISTOR

CORPORATION ISSUED DATE :2006/06/07
REVISED DATE :
GL195A
PNP SILICON PLANAR MEDIUM POWER TRANSISTOR
Description
The GL195A is designed for medium power amplifier applications.
Features
Ô¦1 Amp continuous current
Ô¦Complementary to GL194A
Package Dimensions
SOT-223
REF.
A
C
D
E
I
H
Millimeter
Min. Max.
6.70 7.30
2.90 3.10
0.02 0.10
0° 10°
0.60 0.80
0.25 0.35
REF.
B
J
1
2
3
4
5
Millimeter
Min. Max.
13°TYP.
2.30 REF.
6.30 6.70
6.30 6.70
3.30 3.70
3.30 3.70
1.40 1.80
Absolute Maximum Ratings at Ta = 25к
Parameter
Symbol
Ratings
Unit
Junction Temperature
Tj
+150
к
Storage Temperature
Tstg
-55~+150
к
Collector to Base Voltage
VCBO
-40
V
Collector to Emitter Voltage
VCEO
-40
V
Emitter to Base Voltage
VEBO
-5
V
Collector Current (DC)
IC
-1
A
Collector Current (Pulse)
IC
-2
A
Total Power Dissipation
PD
2
W
Electrical Characteristics (Ta = 25к, unless otherwise stated)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
-40
-
-
V
IC=-100uA , IE=0
*BVCEO
-40
-
-
V
IC=-10mA, IB=0
BVEBO
-5
-
-
V
IE=-100uA ,IC=0
ICBO
-
-
-100
nA VCB=-30V, IE=0
ICES
-
-
-100
nA
VCES=-30V
IEBO
-
-
-100
nA VEB=-4V, IC=0
*VCE(sat)1
-
-
-0.2
V
IC=-100mA, IB=-1mA
*VCE(sat)2
-
-
-0.35
V
IC=-500mA, IB=-20mA
*VCE(sat)3
-
-
-0.5
V
IC=-1A, IB=-100mA
*VBE(sat)
-
-
-1.1
V
IC=-1A, IB=-50mA
*VBE(on)
-
-
-1.0
V
VCE=-5V, IC=-1A
*hFE1
300
-
-
VCE=-5V, IC=-1mA
*hFE2
300
-
900
VCE=-5V, IC=-100mA
*hFE3
250
-
-
VCE=-5V, IC=-500mA
*hFE4
160
-
-
VCE=-5V, IC=-1A
*hFE5
30
-
-
VCE=-5V, IC=-2A
fT
150
-
-
MHz VCE=-10V, IC=-50mA, f=100MHz
Cob
-
-
10
pF VCB=-10V, IE=0, f=1MHz
*Measured under pulse condition. Pulse width=300 s, Duty CycleЉ2%
Classification Of hFE2
Rank
P
Q
Range
300 ~ 700
500 ~ 900
GL195A
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