GL1501A Datasheet, PDF (1/2 Pages) GTM CORPORATION – NPN SILICON PLANAR MEDIUM POWER high gain TRANSISTOR

CORPORATION ISSUED DATE :2006/11/20
REVISED DATE :
GL1501A
NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR
Description
The GL1501A is designed for general purpose switching and amplifier applications.
Features
Ô¦5 Amps continuous current, up to 10Amps pulse current
Ô¦Low saturation voltages
Ô¦High Gain
Package Dimensions
SOT-223
REF.
A
C
D
E
I
H
Millimeter
Min. Max.
6.70 7.30
2.90 3.10
0.02 0.10
0° 10°
0.60 0.80
0.25 0.35
REF.
B
J
1
2
3
4
5
Millimeter
Min. Max.
13°TYP.
2.30 REF.
6.30 6.70
6.30 6.70
3.30 3.70
3.30 3.70
1.40 1.80
Absolute Maximum Ratings at Ta = 25к
Parameter
Junction Temperature
Symbol
Tj
Ratings
+150
Unit
к
Storage Temperature
Tstg
-55~+150
к
Collector to Base Voltage
VCBO
150
V
Collector to Emitter Voltage
VCEO
40
V
Emitter to Base Voltage
VEBO
5
V
Collector Current (DC)
IC
5
A
Collector Current (Pulse)
ICM
10
A
Total Power Dissipation
PD
2.5
W
*The power which can be dissipated assuming the device is mounted in typical manner on a PCB with copper equal to 2 inches x 2 inches.
Electrical Characteristics (Ta = 25к, unless otherwise stated)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
150
-
-
V
IC=100uA , IE=0
*BVCES
150
-
-
V
IC=100uA
BVCEO
40
-
-
V
IC=10mA, IB=0
BVCEV
150
-
-
V
IC=100uA, VEB=1V
BVEBO
5
-
-
V
IE=100uA ,IC=0
ICBO
-
-
10
nA
VCB=120V, IE=0
ICES
-
-
10
nA
VCES=120V
IEBO
-
-
10
nA
VEB=4V, IC=0
*VCE(sat)1
-
-
25
mV IC=200mA, IB=10mA
*VCE(sat)2
-
-
120
mV IC=1A, IB=10mA
*VCE(sat)3
-
-
180
mV IC=2A, IB=20mA
*VCE(sat)4
-
-
340
mV IC=5A, IB=100mA
*VBE(sat)
-
-
1.1
V
IC=5A, IB=100mA
*VBE(on)
-
-
1.0
V
VCE=2V, IC=5A
*hFE1
290
-
-
VCE=2V, IC=10mA
*hFE2
270
-
1200
VCE=2V, IC=1A
*hFE3
130
-
-
VCE=2V, IC=5A
*hFE4
40
-
-
VCE=2V, IC=10A
GL1501A
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