GJ08P10 Datasheet, PDF (1/4 Pages) GTM CORPORATION – P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Pb Free Plating Product
ISSUED DATE :2006/02/21
REVISED DATE :
GJ08P10
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS
RDS(ON)
ID
-100V
200m
-8A
Description
The GJ08P10 provide the designer with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The TO-252 package is universally preferred for all commercial-industrial surface mount applications.
Features
*Simple Drive Requirement
*Lower On-resistance
*Fast Switching Characteristic
*RoHS Compliant
Package Dimensions
TO-252
REF.
A
B
C
D
E
F
S
Millimeter
Min.
Max.
6.40
6.80
5.20
5.50
6.80
7.20
2.40
3.00
2.30 REF.
0.70
0.90
0.60
0.90
REF.
G
H
J
K
L
M
R
Millimeter
Min. Max.
0.50 0.70
2.20 2.40
0.45 0.55
0
0.15
0.90 1.50
5.40 5.80
0.80 1.20
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain Current, V_GS@10V
I_D @TC=25к
Continuous Drain Current, V_GS@10V
Pulsed Drain Current¹
I_D @TC=100к
I_DM
Total Power Dissipation
P_D @TC=25к
Linear Derating Factor
Single Pulse Avalanche Energy²
E_AS
Avalanche Current
I_AR
Operating Junction and Storage Temperature Range Tj, Tstg
Ratings
-100
±32
-8
-6
-32
45
0.36
100
-8
-55 ~ +150
Unit
V
V
A
A
A
W
W/к
mJ
A
к
Thermal Data
Parameter
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
Symbol
Rthj-c
Rthj-a
Value
2.8
110
Unit
к/W
к/W
GJ08P10
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