GI9915 Datasheet, PDF (1/5 Pages) GTM CORPORATION – N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Pb Free Plating Product
ISSUED DATE :2005/02/21
REVISED DATE :
GI9915
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS
RDS(ON)
ID
20V
50m
20A
Description
The GI9915 provide the designer with the best combination of fast switching, ruggedized device design, ultra
low on-resistance and cost-effectiveness.
Features
*Low on-resistance
*Capable of 2.5V gate drive
*Low drive current
*Single Drive Requirement
Package Dimensions
TO-251
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
6.40
6.80
5.20
5.50
6.80
7.20
7.20
7.80
2.30 REF.
0.60
0.90
REF.
G
H
J
K
L
M
Millimeter
Min. Max.
0.50 0.70
2.20 2.40
0.45 0.55
0.45 0.60
0.90 1.50
5.40 5.80
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
Continuous Drain Current, V_GS@4.5V
Continuous Drain Current, V_GS@4.5V
Pulsed Drain Current¹
Total Power Dissipation
Linear Derating Factor
V_GS
I_D @TC=25к
I_D @TC=125к
I_DM
P_D @TC=25к
Operating Junction and Storage Temperature Range Tj, Tstg
Ratings
20
±12
20
16
41
26
0.2
-55 ~ +150
Unit
V
V
A
A
A
W
W/к
к
Thermal Data
Parameter
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
Symbol
Rthj-c
Rthj-a
Value
4.8
110
Unit
к/W
к/W
GI9915
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