GI42C Datasheet, PDF (1/2 Pages) GTM CORPORATION – NPN EPITAXIAL PLANAR TRANSISTOR

ISSUED DATE :2005/05/12
REVISED DATE :
GI42C
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The GI42C is designed for use in general purpose amplifier and switching applications.
Features
*Complementary to GI41C
Package Dimensions
TO-251
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
6.40
6.80
5.20
5.50
6.80
7.20
7.20
7.80
2.30 REF.
0.60
0.90
REF.
G
H
J
K
L
M
Millimeter
Min. Max.
0.50 0.70
2.20 2.40
0.45 0.55
0.45 0.60
0.90 1.50
5.40 5.80
Absolute Maximum Ratings (Ta = 25к,unless otherwise specified)
Parameter
Symbol
Ratings
Unit
Collector to Base Voltage
VCBO
-100
V
Collector to Emitter Voltage
VCEO
-100
V
Emitter to Base Voltage
VEBO
-5
V
Collector Current (DC)
IC
-6
A
Collector Current (Pulse)
IC
-10
A
Junction Temperature
Tj
+150
к
Storage Temperature
TsTG
-55 ~ +150
к
Total Power Dissipation
PD
2
PD(TC=25к)
20
W
W
Electrical Characteristics (Rating at Ta=25к)
Symbol
Min.
Typ.
Max.
BVCBO
-100
-
-
*BVCEO
-100
-
-
BVEBO
-5
-
-
ICES
-
-
-10
ICEO
-
-
-50
IEBO
-
-
-500
*VCE(sat)
-
-
-1.5
*VBE(on)
-
-
-2.0
*hFE1
30
-
-
*hFE2
15
-
75
fT
3
-
-
Unit
V
V
V
uA
uA
uA
V
V
MHz
Test Conditions
IC=-1mA, IE=0
IC=-30mA, IB=0
IE=-100uA, IC=0
VCE=-100V, VEB=0V
VCE=-60V, IB=0
VEB=-5V, IC=0
IC =-6A, IB=-600mA
VCE=-4V, IC=-6A
VCE=-4V, IC=-300mA
VCE=-4V, IC=-3A
VCE=-10V, IC=-500mA, f=1MHz
* Pulse Test: Pulse WidthЉ380 s, Duty CycleЉ2%
GI42C
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