GI3310 Datasheet, PDF (1/5 Pages) GTM CORPORATION – P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Pb Free Plating Product
ISSUED DATE :2005/12/05
REVISED DATE :
GI3310
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS
RDS(ON)
ID
-20V
150m
-10A
Description
The GI3310 provide the designer with the best combination of fast switching, low on-resistance and
cost-effectiveness.
The through-hole version (TO-251) is available for low-profile applications and suited for low voltage and
battery power applications.
Features
*Simple Drive Requirement
*2.5V Gate Drive Capability
Package Dimensions
TO-251
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
6.40
6.80
5.20
5.50
6.80
7.20
7.20
7.80
2.30 REF.
0.60
0.90
REF.
G
H
J
K
L
M
Millimeter
Min. Max.
0.50 0.70
2.20 2.40
0.45 0.55
0.45 0.60
0.90 1.50
5.40 5.80
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
Continuous Drain Current, V_GS@10V
Continuous Drain Current, V_GS@10V
Pulsed Drain Current¹
Total Power Dissipation
V_GS
I_D @TC=25к
I_D @TC=100к
I_DM
P_D @TC=25к
Linear Derating Factor
Operating Junction and Storage Temperature Range Tj, Tstg
Ratings
-20
±12
-10
-6.2
-24
25
0.01
-55 ~ +150
Unit
V
V
A
A
A
W
W/к
к
Thermal Data
Parameter
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
Symbol
Rthj-c
Rthj-a
Value
5.0
110
Unit
к/W
к/W
GI3310
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