GI31C Datasheet, PDF (1/2 Pages) GTM CORPORATION – NPN EPITAXIAL PLANAR TRANSISTOR

ISSUED DATE :2005/05/12
REVISED DATE :
GI31C
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The GI31C is designed for use in general purpose amplifier and switching applications.
Features
*Complementary to GI32C
Package Dimensions
TO-251
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
6.40
6.80
5.20
5.50
6.80
7.20
7.20
7.80
2.30 REF.
0.60
0.90
REF.
G
H
J
K
L
M
Millimeter
Min. Max.
0.50 0.70
2.20 2.40
0.45 0.55
0.45 0.60
0.90 1.50
5.40 5.80
Absolute Maximum Ratings (Ta = 25к,unless otherwise specified)
Parameter
Symbol
Ratings
Unit
Collector to Base Voltage
VCBO
100
V
Collector to Emitter Voltage
VCEO
100
V
Emitter to Base Voltage
VEBO
5
V
Collector Current (DC)
IC
3
A
Collector Current (Pulse)
IC
5
A
Junction Temperature
Tj
+150
к
Storage Temperature
TsTG
-55 ~ +150
к
Total Power Dissipation
PD
2
PD(TC=25к)
15
W
W
Electrical Characteristics (Rating at Ta=25к)
Symbol
Min.
Typ.
Max.
BVCBO
100
-
-
BVCEO
100
-
-
BVEBO
5
-
-
ICES
-
-
20
ICEO
-
-
50
IEBO
-
-
1
*VCE(sat)
-
-
1.2
*VBE(on)
-
-
1.8
*hFE1
25
-
-
*hFE2
10
-
50
fT
3
-
-
Unit
V
V
V
uA
uA
mA
V
V
MHz
Test Conditions
IC=1mA, IE=0
IC=30mA, IB=0
IE=100uA, IC=0
VCE=100V, VEB=0V
VCE=60V, IB=0
VEB=5V, IC=0
IC =3A, IB=375mA
VCE=4V, IC=3A
VCE=4V, IC=1A
VCE=4V, IC=3A
VCE=10V, IC=500mA, f=1MHz
* Pulse Test: Pulse WidthЉ380 s, Duty CycleЉ2%
GI31C
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