GI127 Datasheet, PDF (1/2 Pages) GTM CORPORATION – NPN EPITAXIAL PLANAR TRANSISTOR

ISSUED DATE :2004/12/15
REVISED DATE :2005/12/23B
GI127
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The GI127 is designed for use in general purposes and low speed switching applications.
Features
Ô¦High DC current gain
Ô¦Built-in a damper diode at E-C
Package Dimensions
TO-251
Absolute Maximum Ratings at Ta = 25к
Parameter
Symbol
Junction Temperature
Tj
Storage Temperature
Tstg
Collector to Base Voltage
BVCBO
Collector to Emitter Voltage
BVCEO
Emitter to Base Voltage
BVEBO
Collector Current
IC
Total Power Dissipation(Tc=25к)
PD
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
6.40
6.80
5.20
5.50
6.80
7.20
7.20
7.80
2.30 REF.
0.60
0.90
REF.
G
H
J
K
L
M
Millimeter
Min. Max.
0.50 0.70
2.20 2.40
0.45 0.55
0.45 0.60
0.90 1.50
5.40 5.80
Ratings
Unit
+150
к
-55 ~ +150
к
-100
V
-100
V
-5
V
-5
A
20
W
Electrical Characteristics (Rating at 25к ambient temperature unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
-100
-
-
V
IC=-1mA, IE=0
BVCEO
-100
-
-
V
IC=-30mA, IB=0
BVEBO
-5
-
-
V
IE=-1mA, IC=0
ICBO
-
-
-10
A VCB=-100V, IE=0
ICEX
-
-
-10
A
VCE=-100V, VBE(off)=-1.5V
IEBO
-
-
-2
mA VEB=-5V, IC=0
*VCE(sat)1
-
-
-2
V
IC=-3A, IB=-12mA
*VCE(sat)2
-
-
-4
V
IC=-5A, IB=-20mA
*VBE(sat)
-
-
-4
V
IC=-5A, IB=-50mA
*VBE(on)
-
-
-2.8
V
VCE=-3V, IC=-3A
*hFE1
1
-
-
K
VCE=-3V, IC=-500mA
*hFE2
1
-
-
K
VCE=-3V, IC=-3A
Cob
-
-
300
pF VCB=-10V, f=0.1MHz
* Pulse Test: Pulse WidthЉ380 s, Duty CycleЉ2%
GI127
Page: 1/2