GI01L60 Datasheet, PDF (1/4 Pages) GTM CORPORATION – N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Pb Free Plating Product
ISSUED DATE :2005/08/19
REVISED DATE :
GI01L60
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS
RDS(ON)
ID
600V
12
1A
Description
The GI01L60 (through-hole version) is available for low-profile applications and suited for AC/DC converters.
Features
*Repetitive Avalanche Rated
*Simple Drive Requirement
*Fast Switching Speed
*RoHS Compliant
Package Dimensions
TO-251
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
6.40
6.80
5.20
5.50
6.80
7.20
7.20
7.80
2.30 REF.
0.60
0.90
REF.
G
H
J
K
L
M
Millimeter
Min. Max.
0.50 0.70
2.20 2.40
0.45 0.55
0.45 0.60
0.90 1.50
5.40 5.80
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain Current, V_GS@10V
I_D @TC=25к
Continuous Drain Current, V_GS@10V
Pulsed Drain Current¹
I_D @TC=100к
I_DM
Total Power Dissipation
P_D @TC=25к
Linear Derating Factor
Single Pulse Avalanche Energy²
E_AS
Avalanche Current
I_AR
Repetitive Avalanche Energy
E_AR
Operating Junction and Storage Temperature Range Tj, Tstg
Ratings
600
f30
1
0.8
3
29
0.232
0.5
1
0.5
-55 ~ +150
Unit
V
V
A
A
A
W
W/ć
mJ
A
mJ
ć
Thermal Data
Parameter
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
Symbol
Rthj-case
Rthj-amb
Value
4.3
110
Unit
ć/W
ć/W
GI01L60
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