GESD880 Datasheet, PDF (1/2 Pages) GTM CORPORATION – NPN EPITAXIAL PLANAR TRANSISTOR

ISSUED DATE :2005/12/12
REVISED DATE :
GESD880
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The GESD880 is designed for audio frequency power amplifier application.
Features
Ô¦High DC Current Gain: hFE = 300 (Max.) @ VCE = 5V, IC = 0.5A
Ô¦Low Saturation Voltage: VCE (sat) = 1.0V (Max.) @ IC = 3A, IB = 0.3A
Package Dimensions
Absolute Maximum Ratings (TA=25к)
Parameter
Symbol
Collector to Base Voltage
VCBO
Collector to Emitter Voltage
VCEO
Emitter to Base Voltage
VEBO
Collector Current
IC
Collector Power Dissipation (TA=25к)
PD
Collector Power Dissipation (TC=25к)
PD
Junction Temperature
TJ
Storage Temperature
Tstg
REF.
A
b
c
D
E
L4
L5
Millimeter
Min. Max.
4.40 4.80
0.76 1.00
0.36 0.50
8.60 9.00
9.80 10.4
14.7 15.3
6.20 6.60
REF.
c1
b1
L
e
L1
Ø
A1
Millimeter
Min. Max.
1.25 1.45
1.17 1.47
13.25 14.25
2.54 REF.
2.60 2.89
3.71 3.96
2.60 2.80
Ratings
Unit
80
V
62
V
7
V
3
A
1.5
W
25
W
150
к
-55 ~ +150
к
Electrical Characteristics (TA = 25к unless otherwise noted)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
80
-
-
V
IC=100uA, IE=0
BVCEO
62
-
-
V
IC=50mA, IB=0
BVEBO
7
-
-
V
IE=100uA, IC=0
ICBO
-
-
10
uA
VCB=80V, IE=0
IEBO
-
-
10
uA
VEB=7V, IC=0
*VCE(sat)
-
-
1.0
V
IC=3A, IB=0.3A
*VBE(sat)
-
-
1.5
V
IC=2A, IB=0.2A
*VBE(ON)
-
-
1.0
V
VCE=5V, IC=500mA
*hFE
60
-
300
VCE=5V, IC=0.5A
fT
-
8
-
MHz VCE=5V, IE=-0.5A
Cob
-
40
-
pF
VCB=10V, IE=0, f=1MHz
*Pulse Test: Pulse WidthЉ380 s, Duty CycleЉ2%
Classification Of hFE
Rank
O
Range
60 ~ 120
Y
100 ~ 200
GR
150 ~ 300
GESD880
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