GESD1060 Datasheet, PDF (1/3 Pages) GTM CORPORATION – NPN EPITAXIAL PLANAR TRANSISTOR

ISSUED DATE :2005/09/05
REVISED DATE :
GESD1060
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The GESD1060 is designed for relay drivers, high-speed inverters, converters and other general large-current
switching.
Features
Ô¦Low Collector-Emitter Saturation Voltage : VCE (sat) =0.4V (Max.) @ IC=3A, IB=0.3A,
Package Dimensions
Absolute Maximum Ratings (TA=25к)
Parameter
Symbol
Collector to Base Voltage
VCBO
Collector to Emitter Voltage
VCEO
Emitter to Base Voltage
VEBO
Collector Current
IC
Collector Current (Pulse)
ICP
Total Device Dissipation (TC=25к)
PD
Junction Temperature
TJ
Storage Temperature
Tstg
REF.
A
b
c
D
E
L4
L5
Millimeter
Min. Max.
4.40 4.80
0.76 1.00
0.36 0.50
8.60 9.00
9.80 10.4
14.7 15.3
6.20 6.60
REF.
c1
b1
L
e
L1
Ø
A1
Millimeter
Min. Max.
1.25 1.45
1.17 1.47
13.25 14.25
2.54 REF.
2.60 2.89
3.71 3.96
2.60 2.80
Ratings
Unit
60
V
50
V
6
V
5
A
9
A
30
W
150
к
-55 ~ +150
к
Electrical Characteristics (TA = 25к unless otherwise noted)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
60
-
-
V
IC=1mA, IE=0
BVCEO
50
-
-
V
IC=1mA, IB=0
BVEBO
6
-
-
V
IE=1mA, IC=0
ICBO
-
-
100
uA
VCB=40V, IE=0
IEBO
-
-
100
uA
VEB=4V, IC=0
*VCE(sat)
-
-
0.4
V
IC=3A, IB=0.3A
*hFE1
70
-
280
VCE=2V, IC=1A
*hFE2
30
-
-
VCE=2V, IC=3A
fT
-
30
-
MHz VCE=5V, IC=1A
Cob
-
100
-
pF
VCB=10V, IE=0, f=1MHz
ton (Turn-on Time)
-
0.1
-
tstg (Storage Time)
-
1.4
-
uS See specified test circuit
tf (Fall Time)
-
0.2
-
*Pulse Test: Pulse WidthЉ380 s, Duty CycleЉ2%
GESD1060
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