GE2026 Datasheet, PDF (1/3 Pages) GTM CORPORATION – NPN EPITAXIAL PLANAR TRANSISTOR

ISSUED DATE :2005/09/05
REVISED DATE :
GE2026
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The GE2026 is designed for general purpose application.
Features
Ô¦Low Collector Saturation Voltage : VCE (sat) =1.0V (Max.) @ IC=2A, IB=0.2A,
Package Dimensions
Absolute Maximum Ratings (TA=25к)
Parameter
Symbol
Collector to Base Voltage
VCBO
Collector to Emitter Voltage
VCEO
Emitter to Base Voltage
VEBO
Collector Current
IC
Base Current
IB
Total Device
TA=25к
PD
Dissipation
TC=25к
PD
Junction Temperature
TJ
Storage Temperature
Tstg
REF.
A
b
c
D
E
L4
L5
Millimeter
Min. Max.
4.40 4.80
0.76 1.00
0.36 0.50
8.60 9.00
9.80 10.4
14.7 15.3
6.20 6.60
REF.
c1
b1
L
e
L1
Ø
A1
Millimeter
Min. Max.
1.25 1.45
1.17 1.47
13.25 14.25
2.54 REF.
2.60 2.89
3.71 3.96
2.60 2.80
Ratings
Unit
60
V
60
V
7
V
3
A
0.5
A
2
W
20
W
150
к
-55 ~ +150
к
Electrical Characteristics (TA = 25к unless otherwise noted)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
60
-
-
V
IC=100uA, IE=0
BVCEO
60
-
-
V
IC=50mA, IB=0
BVEBO
7
-
-
V
IE=100uA, IC=0
ICBO
-
-
100
uA
VCB=60V, IE=0
IEBO
-
-
100
uA
VEB=7V, IC=0
*VCE(sat)
-
-
1.0
V
IC=2A, IB=0.2A
*VBE(on)
-
-
1.0
V
VCE=5V, IC=0.5A
*hFE1
100
-
320
VCE=5V, IC=0.5A
*hFE2
20
-
-
VCE=5V, IC=3A
fT
-
30
-
MHz VCE=5V, IC=0.5A
Cob
-
35
-
pF
VCB=10V, IE=0, f=1MHz
ton (Turn-on Time)
-
0.65
-
tstg (Storage Time)
-
1.3
-
uS See specified test circuit
tf (Fall Time)
-
0.65
-
*Pulse Test: Pulse WidthЉ380 s, Duty CycleЉ2%
GE2026
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