GE13003 Datasheet, PDF (1/4 Pages) GTM CORPORATION – NPN SILICON POWER TRANSISTOR

ISSUED DATE :2005/01/12
REVISED DATE :
GE13003
NPN SILICON POWER TRANSISTOR
Description
The GE13003 is designed for high voltage, high speed power switching inductive circuit where fall time is
critical. It is particularly suited for 115 and 220v Switch-mode.
Features
ԦInductive Switching Matrix 0.5~1.5Amp, 25 and 100кˁˁˁtc @ 1A, 100к is 290ns(Typ)
Ô¦700V Blocking Capability
Ô¦SOA and Switching Application Information
Package Dimensions
Absolute Maximum Ratings at Ta = 25к
Parameter
Junction Temperature
Symbol
Tj
Storage Temperature
Collector to Emitter Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Tstg
VCEO(sus)
VCEO
VEBO
Collector Current -Continuous
IC
-Peak(1)
ICM
Base Current -Continuous
IB
-Peak(1)
IBM
Emitter Current -Continuous
IE
-Peak(1)
IEM
Total Power Dissipation at Ta=25к
Derate above 25к
PD
Total Power Dissipation at Tc=25к
Derate above 25к
PD
REF.
A
b
c
D
E
L4
L5
Millimeter
Min. Max.
4.40 4.80
0.76 1.00
0.36 0.50
8.60 9.00
9.80 10.4
14.7 15.3
6.20 6.60
REF.
c1
b1
L
e
L1
Ø
A1
Millimeter
Min. Max.
1.25 1.45
1.17 1.47
13.25 14.25
2.54 REF.
2.60 2.89
3.71 3.96
2.60 2.80
Ratings
+150
-55 ~ +150
400
700
9
1.5
3.0
0.75
1.5
2.25
4.5
1.4
11.2
40
320
Unit
ć
ć
V
V
V
A
A
A
W
mW /к
W
mW /к
Thermal Characteristics
Parameter
Thermal Resistance, Junction-ambient
Thermal Resistance, Junction-case
Maximum Lead Temperature for Soldering
Purposes:1/8” from Case for 5 Seconds
(1)Pulse Test: Pulse Width=5ms, Duty CycleЉ10%
Symbol
R JA
R JC
TL
Value
89
3.12
275
Unit
ć/W
ć/W
ć
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