GDMBD2004 Datasheet, PDF (1/2 Pages) GTM CORPORATION – SURFACE MOUNT,SWITCHING DIODE

GDMBD2004
S U RFAC E MO U NT, S WIT C HI NG D IO DE
VOLTAGE 300V, CURRENT 0. 225A
Description
The GDMBD2004 is designed for ultra high speed switching.
Package Dimensions
ISSUED DATE :2005/12/23
REVISED DATE :
REF.
A
A1
A2
D
E
HE
Millimeter
Min. Max.
0.85 1.05
0
0.10
0.80 1.00
1.15 1.45
1.60 1.80
2.30 2.70
REF.
L
b
c
Q1
Millimeter
Min. Max.
0.20
0.40
0.25
0.40
0.10
0.18
0.15 BSC.
Absolute Maximum Ratings (At TA = 25к unless otherwise specified)
Parameter
Symbol
Ratings
Repetitive Peak Reverse Voltage
VRRM
300
Continuous reverse voltage
VR(VRW M)
240
RMS Reverse Voltage
VR(RMS)
170
Forward Continuous Current
IFM
225
Non-Repetitive Peak Forward surge Current @Tp =1.0us
@Tp=1.0s
IFSM
4
1
Typical Junction Capacitance between Terminal (Note1)
CJ
5.0
Max. Reverse Recovery Time (Note2)
TRR
50
Power Dissipation
PD
350
Thermal Resistance Junction to Ambient Air
R JA
357
Operation and Storage Temperature Range
TJ, TSTG
-65 ~ +150
Unit
V
V
V
mA
A
pF
nSec
mW
к /W
к
Electrical Characteristics (At TA = 25к unless otherwise noted)
Characteristics
Symbol Min.
Max.
Unit
Test Conditions
Reverse Breakdown Voltage
BVR
300
-
V
IR=100uA
0.85
V
IF=20mA
Forward Voltage
VF
-
1
V
IF=100mA
-
1.25
V
IF=225mA
Reverse Current
100
nA
VR=240V, TA=25к
IR
-
100
uA
VR=240V, TA=150к
Notes: 1. Measured at 1.0 MHz and applied reverse voltage of 0 volts.
2. Measured at applied forward current of 30mA, reverse current of 30mA, RL=100
3. ESD sensitive product handling required.
and recovery to IRR=-3mA.
GDMBD2004
Page: 1/2