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GBG640CT Datasheet, PDF (1/3 Pages) GTM CORPORATION – low voltage, high frequency inverter,
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GBG640CT
Description
The GBG640CT is designed for low voltage, high frequency inverter, free wheeling, and polarity protection application.
Package Dimensions
Absolute Maximum Ratings
Parameter
Junction Temperature
Storage Temperature
Typical Thermal Resistance Junction to Case
Peak Repetitive Forward Current, Tc = 125к
(Rated VR, Square Wave,20 kHz) Per Diode
Reverse Leakage Current @ Tj = 25 к VR= 40V
Reverse Leakage Current @ Tj = 125 к VR=40V
Forward Voltage Drop @ IF = 3.0A , Tj = 25 к
Forward Voltage Drop @ IF = 3.0A , Tj = 125 к
Non-Repetitive Peak Forward Surge Current 5us
Single half Sine-wave superimposed on rated load
Non-Repetitive Peak Forward Surge Current 10ms
Single half Sine-wave superimposed on rated load
Peak Repetitive Reverse Surge Current(2us,1kHz)
Rectangular waveform
RMS Reverse Voltage
Peak Repetitive Reverse Voltage
REF.
A
B
C
D
E
F
S
Millimeter
Min.
Max.
6.40
6.80
5.20
5.50
6.80
7.20
2.20
2.80
2.30 REF.
0.70
0.90
0.60
0.90
REF.
G
H
J
K
L
M
R
Millimeter
Min.
Max.
0.50
0.70
2.20
2.40
0.45
0.55
0
0.15
0.90
1.50
5.40
5.80
0.80
1.20
Symbol
Tj
Tstg
RÓ°JC
IFRM
IRM
VFM
IFSM
IRRM
IF
VR(RMS)
VRRM
Ratings
-40~+125
-40~+125
6.0
6
0.3
20
0.55
0.49
490
75
1
6
40
40
Unit
ć
ć
ć/W
A
mA
mA
V
V
A
A
A
A
V
V