GBC848 Datasheet, PDF (1/2 Pages) GTM CORPORATION – NPN EPITAXIAL PLANAR TRANSISTOR

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GBC848
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The GBC848 is designed for switching and AF amplifier application, suitable for automatic insertion in thick and thin-film circuits.
Package Dimensions
TPU.34)QBDLBHF*
Absolute Maximum Ratings at Ta = 25к
Parameter
Symbol
Junction Temperature
Tj
Storage Temperature
Tstg
Collector to Base Voltage
VCBO
Collector to Emitter Voltage
VCEO
Emitter to Base Voltage
VEBO
Collector Current
IC
Total Power Dissipation
PD
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.10
2.40 2.80
1.40 1.60
0.35 0.50
0
0.10
0.45 0.55
REF.
G
H
K
J
L
M
Millimeter
Min. Max.
1.90 REF.
1.00 1.30
0.10 0.20
0.40
-
0.85 1.15
0̓
10̓
Ratings
Unit
+150
ć
-55 ~ +150
ć
30
V
30
V
5
V
100
mA
225
mW
Characteristics at
Symbol
Min.
BVCBO
30
BVCEO
30
BVEBO
5
ICBO
-
VCE(sat)1
-
VCE(sat)2
-
VBE(sat)1
-
VBE(sat)2
-
VBE(on)1
580
VBE(on)2
-
hFE
110
fT
-
Cob
-
Ta = 25к
Typ.
-
-
-
-
90
200
700
900
-
-
-
300
3.5
Max.
-
-
-
15
250
600
-
-
700
770
800
-
6
Unit
V
V
V
nA
mV
mV
mV
mV
mV
mV
MHz
pF
Test Conditions
IC=100uA
IC=1mA
IE=10uA
VCB=30V
IC=10mA, IB=0.5mA
IC=100mA, IB=5mA
IC=10mA, IB=0.5mA
IC=100mA, IB=5mA
VCE=5V, IC=2mA
VCE=5V, IC=10mA
VCE=5V, IC=2mA
VCE=5V, IC=10mA
VCB=10V, f=1MHz, IE=0A