GBC817 Datasheet, PDF (1/2 Pages) GTM CORPORATION – NPN EPITAXIAL PLANAR TRANSISTOR

1/2
GBC817
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The GBC817 is designed for switching and AF amplifier application, suitable for driver storages and low power output storages.
Package Dimensions
TPU.34)QBDLBHF*
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.10
2.40 2.80
1.40 1.60
0.35 0.50
0
0.10
0.45 0.55
REF.
G
H
K
J
L
M
Millimeter
Min. Max.
1.90 REF.
1.00 1.30
0.10 0.20
0.40
-
0.85 1.15
0̓
10̓
Absolute Maximum Ratings at Ta = 25к
Parameter
Symbol
Ratings
Unit
Junction Temperature
Tj
+150
ć
Storage Temperature
Tstg
-55 ~ +150
ć
Collector to Base Voltage
VCBO
50
V
Collector to Emitter Voltage
VCEO
45
V
Emitter to Base Voltage
VEBO
5
V
Collector Current
IC
800
mA
Total Power Dissipation
PD
225
mW
Characteristics at
Symbol
BVEBO
Min.
5
BVCEO
45
BVCES
50
ICES
-
IEBO
-
*VCE(sat)
-
VBE(on)
-
hFE
100
fT
-
Cob
-
Ta = 25к
Typ.
-
-
-
-
-
-
-
-
100
-
Max.
-
-
-
100
100
700
1.2
630
-
12
Unit
V
V
V
nA
nA
mV
V
MHz
pF
Test Conditions
IE=-100uA
IC=10mA
IC=100uA
VCE=25V
VEB=4V
IC=500mA, IB=50mA
VCE=1V, IC=300mA
VCE=1V, IC=100mA
VCE=5V, IC=10mA, f=100MHz
VCB=10V, f=1MHz, IE=0A