GBC556 Datasheet, PDF (1/2 Pages) GTM CORPORATION – PNP SILICON TRANSISTOR

ISSUED DATE :2005/03/25
REVISED DATE :2005/10/21B
GBC556
PNP SILICON TRANSISTOR
Description
The GBC556 is designed for drive and output-stages of audio amplifiers.
Features
Ô¦High DC Current Gain: 120~800 @VCE=-5V, IC=-2mA
Ô¦Complementary to GBC546
Package Dimensions
D
TO-92
E
S1
b1
S E A T IN G
PLANE
C
e1
b
e
REF.
A
S1
b
b1
C
Millimeter
Min. Max.
4.45
4.7
1.02
-
0.36
0.51
0.36
0.76
0.36
0.51
REF.
D
E
L
e1
e
Millimeter
Min.
Max.
4.44
4.7
3.30
3.81
12.70
-
1.150 1.390
2.42
2.66
Absolute Maximum Ratings (TA=25к)
Parameter
Symbol
Collector to Base Voltage
VCBO
Collector to Emitter Voltage
VCEO
Emitter to Base Voltage
VEBO
Collector Current (continuous)
IC
Total Device Dissipation @ TA =25к
Derate above 25к
PD
Total Device Dissipation @ TC =25к
Derate above 25к
PD
Operating and Storage Junction Temperature
TJ, Tstg
Thermal Resistance, Junction to Ambient
R JA
Thermal Resistance, Junction to Case
R JC
Ratings
-80
-65
-5
-100
625
5.0
1.5
12
-55 ~ +150
200
83.3
Unit
V
V
V
mA
mW
mW/к
W
mW/к
к
к/W
к/W
Electrical Characteristics (TA = 25к unless otherwise noted)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
-80
-
-
V
IC=-100uA, IE=0
BVCEO
-65
-
-
V
IC=-2mA, IB=0
BVEBO
-5
-
-
V
IE=-100uA, IC=0
ICES
-
-
-100
nA
VCE=-40V, VBE=0
*VCE(sat)1
-
-0.075
-0.3
V
IC=-10mA, IB=-0.5mA
*VCE(sat)2
-
-0.25
-0.65
V
IC=-100mA, IB=-5mA
*VBE(sat)1
-
-0.7
-
V
IC=-10mA, IB=-0.5mA
*VBE(sat)2
-
-1.0
-
V
IC=-100mA, IB=-5mA
*VBE(on)1
-0.55
-0.62
-0.7
V
VCE=-5V, IC=-2mA
*VBE(on)2
-
-0.7
-0.82
V
VCE=-5V, IC=-10mA
*hFE
120
-
800
VCE=-5V, IC=-2mA
fT
-
280
-
MHz VCE=-5V, IC=-10mA, f=100MHz
Cob
-
3.0
6.0
pF
VCB=-10V, IC=0, f=1MHz
Classification Of hFE
Rank
A
Range
120 ~ 220
B
180 ~ 460
C
420 ~ 800
*Pulse Test: Pulse WidthЉ380 s, Duty CycleЉ2%
GBC556
Page: 1/2