GBAW56 Datasheet, PDF (1/2 Pages) GTM CORPORATION – SURFACE MOUNT,SWITCHING DIODE

CORPORATION ISSUED DATE :2004/02/06
REVISED DATE :2005/12/23C
G B AW 56
SURFACE MOUNT, SWITCHING DIODE
Description
The GBAW56 consists of two high-speed switching diodes with common anodes, fabricated in planar technology,
and encapsulated in a small SOT-23 plastic SMD package.
Package Dimensions
TPU.34)QBDLBHF*
Style: Pin 1.Cathode 2.Cathode 3. Common Anode
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.10
2.40 2.80
1.40 1.60
0.35 0.50
0
0.10
0.45 0.55
REF.
G
H
K
J
L
M
Millimeter
Min. Max.
1.90 REF.
1.00 1.30
0.10 0.20
0.40
-
0.85 1.15
0°
10°
Absolute Maximum Ratings at TA = 25к
Parameter
Symbol
Ratings
Unit
Junction Temperature
Tj
+125
к
Storage Temperature
Tstg
-65 ~ +150
к
Repetitive Peak Reverse Voltage
VRRM
85
V
Continuous Reverse Voltage
VR
75
V
single diode loaded (note1)
150
Continuous Forward Current
IF
mA
double diode loaded (note1)
130
Repetitive Peak Forward Current
IFRM
500
mA
Non-Repetitive Peak Forward Current (1ms)
IFSM
1
A
Total Power Dissipation
PD
250
mW
Notes: 1. Device mounted on an FR4 printed-circuit board.
Electrical Characteristics (at TA = 25к unless otherwise noted)
Parameter
Symbol
Min.
Max.
Unit
Test Conditions
Reverse Voltage
VR
85
-
V
IR=100uA
VF(1)
-
715
mV
IF=1mA
Forward Voltage
VF(2)
-
855
mV
IF=10mA
VF(3)
-
1000
mV
IF=50mA
VF(4)
-
1250
mV
IF=150mA
Reverse Current
IR
-
1
uA
VR=80V
Diode Capacitance
CD
2
pF
VR=0, f=1MHz
Reverse Recovery Time
Trr
-
4
nS
IF=IR=10mA, RL=100 measured at IR=1mA
GBAW56
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