GBAV99 Datasheet, PDF (1/2 Pages) GTM CORPORATION – consists of two diodes in a plastic surface mount

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G B AV99
Description
The GBAV99 consists of two diodes in a plastic surface mount package. The diodes are connected in series and the unit is
designed for high-speed switching application in hybrid thick and thin-film circuits.
Package Dimensions
TPU.34)QBDLBHF*
Absolute Maximum Ratings at Ta = 25к
Parameter
Junction Temperature
Storage Temperature
Reverse Voltage
Repetitive Reverse Voltage
Forward Current
Repetitive Forward Current
Forward Surge Current(1ms)
Total Power Dissipation
Symbol
Tj
Tstg
PD
Style : Pin1.Anode 2.Cathode
3.Common Connection
REF.
Millimeter
Min. Max.
REF.
Millimeter
Min. Max.
A 2.70 3.10
G
1.90 REF.
B 2.40 2.80
H 1.00 1.30
C 1.40 1.60
K 0.10 0.20
D 0.35 0.50
J 0.40
-
E
0
0.10
L 0.85 1.15
F 0.45 0.55
M
0̓
10̓
Ratings
Unit
+150
ć
-65~+150
ć
70
V
70
V
150
mA
500
mA
1000
mA
250
mW
Characteristics at Ta = 25к
Characteristic
Reverse Breakdown Voltage
Symbol
V(BR)
Min.
70
Forward Voltage
VF(1)
-
VF(2)
-
VF(3)
-
Reverse Current
Total Capacitance
VF(4)
-
IR
-
CT
Reverse Recovery Time
Trr
-
Max.
-
715
855
1000
1250
2.5
1.5
6
Unit
Test Conditions
V
IR=100uA
mV
IF=1mA
mV
IF=10mA
mV
IF=50mA
mV
IF=150mA
uA
VR=70V
pF
VR=0, f=1MHz
nS
IF=IR=10mA, RL=100Ó¨ measured at IR=1mA