GBAT54 Datasheet, PDF (1/2 Pages) GTM CORPORATION – Silicon Schottky Barrier Double Diodes .

1/2
G B AT 5 4 / A/ C / S
Description
Silicon Schottky Barrier Double Diodes .
Package Dimensions
TPU.34)QBDLBHF*
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
2.70
3.10
2.40
2.80
1.40
1.60
0.35
0.50
0
0.10
0.45
0.55
REF.
G
H
K
J
L
M
Millimeter
Min.
Max.
1.90 REF.
1.00
1.30
0.10
0.20
0.40
-
0.85
1.15
0̓
10̓
Absolute Maximum Ratings
Parameter
Symbol
Junction Temperature
Tj
Storage Temperature
Tstg
Repetitive Peak Reverse Voltage
Forward Continuous Current
Repetitive Peak Forward Current
Surge Forward Current
Total Power Dissipation at Ta = 25к
PD
Characteristics at Ta = 25к
characteristics
Symbol
Min
Reverse breakdown voltage
V(BR)R
30
VF(1)
-
Forward Voltage
VF(2)
-
VF(3)
-
VF(4)
-
Reverse Current
Total Capacitance
Reverse Recover Time
VF(5)
-
IR
-
CT
-
Trr
-
Max.
-
240
320
400
500
1000
2.0
10
5
Style : Pin 1.Anode 2.Cathode 3.Common Connection
Ratings
Unit
+125
ć
-65 ~ +125
ć
30
V
200
mA
300
mA
600
mA
230
mW
Unit
Test Conditions
V
IR=10uA
mV IF=0.1mA
mV IF=1mA
mV IF=10mA
mV IF=30mA
mV IF=100mA
uA VR=25V
pF
VR=1V, f=1MHz
ns
IF=IR=10mA, RL=100Ó¨ measured at IR=1mA