GBAS40 Datasheet, PDF (1/2 Pages) GTM CORPORATION – SURFACE MOUNT SCHOTTKY BARRIER DIODE VOLTAGE 40V,CURRENT 0.2A

CORPORATION ISSUED DATE :2003/05/05
REVISED DATE :2005/12/20B
GBAS40 thru GBAS40-06
S U RFAC E MO U NT, SC HOT T KY B AR RIE R DIO DE
VOLTAGE 40V, CURRENT 0. 2A
Description
These schottky barrier diodes are designed for high speed switching applications, circuit protection and voltage
clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is
excellent for hand held and portable applications where space is limited.
Package Dimensions
TPU.34)QBDLBHF*
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
2.70
3.10
2.40
2.80
1.40
1.60
0.35
0.50
0
0.10
0.45
0.55
REF.
G
H
K
J
L
M
Millimeter
Min.
Max.
1.90 REF.
1.00
1.30
0.10
0.20
0.40
-
0.85
1.15
0°
10°
Absolute Maximum Ratings at TA = 25к
Parameter
Operating Junction Temperature
Storage Temperature
Maximum Repetitive Peak Reverse Voltage
Thermal Resistance Junction to Ambient Air
Peak Forward Surge Current at tp < 1.0s
Maximum Average Forward Rectified Current
Total Power Dissipation
Symbol
Tj
Tstg
VRRM
R JA
IFSM
Io
PD
Electrical Characteristics (at TA = 25к unless otherwise noted)
Parameter
Symbol Min.
Typ.
Max.
Reverse Breakdown Voltage
V(BR)R
40
-
-
Forward Voltage(tp < 300uS)
-
VF
-
-
380
-
1000
Reverse Leakage Current
IR
-
200
Total Capacitance
CT
-
-
5.0
Reverse Recover Time
Trr
-
-
5.0
Ratings
-55 ~ +125
-55 ~ +150
40
445
0.6
0.2
225
Unit
к
к
V
к/W
A
A
mW
Unit
Test Conditions
V IR=10 A
IF1=1mA
mV
IF2=40mA
nA VR=30V
pF VR=0V, f=1MHz
ns IF=IR=10mA, RL=100 , Irr=1mA
GBAS40
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