GBAS16 Datasheet, PDF (1/2 Pages) GTM CORPORATION – SURFACE MOUNT,SWITCHING DIODE VOLTAGE 85V,CURRENT 250mA

CORPORATION ISSUED DATE :2002/10/28
REVISED DATE :2006/06/06C
GBAS16
SURFACE MOUNT, SWITCHING DIODE
VOLTAGE 85V, CURRENT 250mA
Description
The GBAS16 is designed for high-speed switching application in hybrid thick and thin-film circuits.
The devices is manufactured by the silicon epitaxial planar process and packed in a plastic surface mount
package.
Package Dimensions
TPU.34)QBDLBHF*
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.10
2.40 2.80
1.40 1.60
0.35 0.50
0
0.10
0.45 0.55
REF.
G
H
K
J
L
M
Millimeter
Min. Max.
1.90 REF.
1.00 1.30
0.10 0.20
0.40
-
0.85 1.15
0°
10°
Absolute Maximum Ratings at TA = 25к
Parameter
Symbol
Ratings
Unit
Junction Temperature
Tj
+150
к
Storage Temperature
Tstg
-65 ~ +150
к
Reverse Voltage
VR
85
V
Repetitive Reverse Voltage
VRRM
85
V
Forward Current
IO
250
mA
Repetitive Forward Current
IFM
500
mA
Forward Surge Current (1ms)
IFSM
1000
mA
Total Power Dissipation(Note1)
PD
350
mW
Note 1.Device mounted on FR-4=1.6*1.6*0.06in
Electrical Characteristics (at TA = 25к unless otherwise noted)
Characteristic
Symbol
Min.
Max.
Unit
Test Conditions
Reverse Breakdown Voltage
V(BR)
85
-
V
IR=100uA
VF(1)
-
715
mV
IF=1mA
Forward Voltage
VF(2)
-
855
mV
IF=10mA
VF(3)
-
1000
mV
IF=50mA
VF(4)
-
1250
mV
IF=150mA
Reverse Current
IR
-
1
uA
VR=85V
Total Capacitance
CT
2
pF
VR=0, f=1MHz
Reverse Recovery Time
Trr
-
6
nS
IF=IR=10mA, RL=100 measured at IR=1mA
GBAS16
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