GB840 Datasheet, PDF (1/2 Pages) GTM CORPORATION – SCHOTTKY BARRIER DIODE VOLTAGE 40V, CURRENT 8A RECTIFIE

ISSUED DATE :2005/05/26
REVISED DATE :
GB840
SCHOTTKY BARRIER DIODE
VO LTAG E 4 0 V, CU R R ENT 8 A RE CT I F I E R
Description
The GB840 is designed for switching power supplies, converters, free wheeling and reverse battery protection
applications.
Features
*Low forward voltage drop
*High frequency operation
Package Dimensions
TO-252
REF.
A
B
C
D
E
F
S
Millimeter
Min.
Max.
6.40
6.80
5.20
5.50
6.80
7.20
2.20
2.80
2.30 REF.
0.70
0.90
0.60
0.90
REF.
G
H
J
K
L
M
R
Millimeter
Min. Max.
0.50
0.70
2.20
2.40
0.45
0.55
0
0.15
0.90
1.50
5.40
5.80
0.80
1.20
Absolute Maximum Ratings at Ta=25к
Parameters
Symbol Ratings
DC Reverse Voltage
V_R(RMS)
40
Working Peak Reverse Voltage
V_RWM
40
Average Forward Current
I_F
8
Surge Forward Current
I_FSM
380
Junction Temperature
Tj
-55 ~ +150
Storage Temperature
Tstg -55 ~ +175
Thermal Resistance, Junction to case
R JC
5
Unit
Condition
V
V
A 50% duty cycle @TC=119к, rectangular waveform
A 10ms Sine or 6ms Rect. pulse
к
к
к/W
Electrical Characteristics
Parameters
Symbol
Reverse Voltage
V_R
Forward Voltage*
V_F
Reverse Current*
I_R
Junction Capacitance
C_T
Series Inductance
L_S
Note *: Pulse Width <300 s, Duty Cycle <2%.
Ratings
min typ max
40
-
-
-
- 0.53
-
- 2.0
-
- 900
- 10.0 -
Unit
Condition
V IR=3mA, Tj=25к
V IF=8A, Tj=25к
mA VR=40V, Tj=25к
pF
VR=5V,Tj=25к
(test signal range 100KHz~1MHz)
nH Measure lead to lead 5mm form body
GB840
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