G9015 Datasheet, PDF (1/3 Pages) GTM CORPORATION – PNP EPITAXIAL PLANAR TRANSISTOR

G9015
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The G9015 is designed for use in pre-amplifier of low level and low noise.
Package Dimensions
D
E
S1
TO-92
ISSUED DATE :2004/11/18
REVISED DATE :
b1
S E A T IN G
PLANE
C
e1
b
e
REF.
A
S1
b
b1
C
Millimeter
Min. Max.
4.45
4.7
1.02
-
0.36
0.51
0.36
0.76
0.36
0.51
REF.
D
E
L
e1
e
Millimeter
Min.
Max.
4.44
4.7
3.30
3.81
12.70
-
1.150 1.390
2.42
2.66
Absolute Maximum Ratings at Ta = 25к
Parameter
Symbol
Ratings
Unit
Junction Temperature
Tj
+150
ć
Storage Temperature
Tstg
-55 ~ +150
ć
Collector to Base Voltage
VCBO
-50
V
Collector to Emitter Voltage
VCEO
-45
V
Emitter to Base Voltage
VEBO
-5
V
Collector Current
IC
-100
mA
Total Power Dissipation
PD
450
mW
Characteristics at
Symbol
BVCBO
Min.
-50
BVCEO
-45
BVEBO
-5
ICBO
-
IEBO
-
*VCE(sat)
-
*VBE(sat)
-
VBE(on)
-0.6
*hFE
100
fT
100
Cob
-
Ta = 25к
Typ.
-
-
-
-
-
-0.20
-0.82
-0.65
200
190
4.5
Max.
-
-
-
-50
-50
-0.7
-1.0
-0.75
600
-
7
Classification Of hFE
Rank
hFE
B
100 - 300
C
200 - 600
Unit
V
V
V
nA
nA
V
V
V
MHz
pF
Test Conditions
IC=-100uA , IE=0
IC=-1mA, IB=0
IE=-100uA, IC=0
VCB=-50V, IE=0
VEB=-5V, IC=0
IC=-100mA, IB=-5mA
IC=-100mA, IB=-5mA
VCE=-5V, IC=-2mA
VCE=-5V, IC=-1mA
VCE=-5V, IC=-10mA
VCB=-10V, f=1MHz
*Pulse Test: Pulse Width 380us, Duty Cycle 2%
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