G9014 Datasheet, PDF (1/3 Pages) GTM CORPORATION – NPN EPITAXIAL TRANSISTOR

G9014
NPN EPITAXIAL TRANSISTOR
Description
The G9014 is designed for general purpose amplifier applications.
Package Dimensions
D
E
S1
TO-92
ISSUED DATE :2004/11/10
REVISED DATE :
b1
S E A T IN G
PLANE
C
e1
b
e
REF.
A
S1
b
b1
C
Millimeter
Min. Max.
4.45
4.7
1.02
-
0.36
0.51
0.36
0.76
0.36
0.51
REF.
D
E
L
e1
e
Millimeter
Min.
Max.
4.44
4.7
3.30
3.81
12.70
-
1.150 1.390
2.42
2.66
Absolute Maximum Ratings at Ta = 25к
Parameter
Symbol
Ratings
Unit
Junction Temperature
Tj
+150
ć
Storage Temperature
Tstg
-55 ~ +150
ć
Collector to Base Voltage
VCBO
50
V
Collector to Emitter Voltage
VCEO
45
V
Emitter to Base Voltage
VEBO
5
V
Collector Current
IC
100
mA
Total Power Dissipation
PD
450
mW
Characteristics at
Symbol
BVCBO
BVCEO
Min.
50
45
BVEBO
5
ICBO
-
IEBO
-
VCE(sat)
-
VBE(sat)
-
VBE(on)
0.58
hFE
100
fT
150
Cob
-
Ta = 25к
Typ.
-
-
-
-
-
0.14
0.84
0.63
280
270
2.20
Max.
-
-
-
50
50
0.3
1
0.7
1000
-
3.5
Classification Of hFE
Rank
hFE
B
100 - 300
C
200-600
Unit
V
V
V
nA
nA
V
V
V
MHz
pF
Test Conditions
IC=100uA , IE=0
IC=1mA, IB=0
IE=100uA, IC=0
VCB=50V, IE=0
VEB=5V, IC=0
IC=100mA, IB=5mA
IC=100mA, IB=5mA
VCE=5V, IC=2mA
VCE=5V, IC=1mA
VCE=5V, IC=10mA
VCB=10V, f=1MHz, IE=0
D
400-1000
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