G9012 Datasheet, PDF (1/2 Pages) GTM CORPORATION – PNP EPITAXIAL TRANSISTOR

G9012
PNP EPITAXIAL TRANSISTOR
Description
The G9012 is designed for use in 1W output amplifier of portable radios in class B push-pull operation.
Package Dimensions
D
E
S1
TO-92
ISSUED DATE :2004/11/18
REVISED DATE :
b1
S E A T IN G
PLANE
C
e1
b
e
REF.
A
S1
b
b1
C
Millimeter
Min. Max.
4.45
4.7
1.02
-
0.36
0.51
0.36
0.76
0.36
0.51
REF.
D
E
L
e1
e
Millimeter
Min.
Max.
4.44
4.7
3.30
3.81
12.70
-
1.150 1.390
2.42
2.66
Absolute Maximum Ratings at Ta = 25к
Parameter
Symbol
Ratings
Unit
Junction Temperature
Tj
+150
ć
Storage Temperature
Tstg
-55 ~ +150
ć
Collector to Base Voltage
VCBO
-40
V
Collector to Emitter Voltage
VCEO
-20
V
Emitter to Base Voltage
VEBO
-5
V
Collector Current
IC
-500
mA
Total Power Dissipation
PD
625
mW
Characteristics at
Symbol
BVCBO
BVCEO
Min.
-40
-20
BVEBO
-5
ICBO
-
IEBO
-
VCE(sat)
-
VBE(sat)
-
VBE(on)
-
hFE1
112
hFE2
40
fT
100
Cob
-
Ta = 25к
Typ.
-
-
-
-
-
-
-
-
180
-
-
-
Max.
-
-
-
-100
-100
-0.6
-1.2
-0.9
300
-
-
8
Classification Of hFE1
Rank
hFE1
G
112 - 166
H
144 - 202
Unit
V
V
V
nA
nA
V
V
V
MHz
pF
Test Conditions
IC=-100uA , IE=0
IC=-1mA, IB=0
IE=-100uA, IC=0
VCB=-25V, IE=0
VEB=-3V, IC=0
IC=-500mA, IB=-50mA
IC=-500mA, IB=-50mA
VCE=-1V, IC=-10mA
VCE=-1V, IC=-50mA
VCE=-1V, IC=-500mA
VCE=-1V, IC=-10mA, f=100MHz
VCB=-10V, f=1MHz
L
176 - 300
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