G8550 Datasheet, PDF (1/2 Pages) GTM CORPORATION – PNP EPITAXIAL TRANSISTOR

CORPORATION ISSUED DATE :2004/12/27
REVISED DATE :
G8550
PNP EPITAXIAL TRANSISTOR
Description
The G8550 is designed for use in 2W output amplifier of portable radios in class B push-pull operation.
Features
*High Collector current (IC: 1.5A)
*Complementary to G8050
Package Dimensions
D
E
S1
TO-92
b1
S E A T IN G
PLANE
C
e1
b
e
REF.
A
S1
b
b1
C
Millimeter
Min. Max.
4.45 4.7
1.02
-
0.36 0.51
0.36 0.76
0.36 0.51
REF.
D
E
L
e1
e
Millimeter
Min. Max.
4.44 4.7
3.30 3.81
12.70 -
1.150 1.390
2.42 2.66
Absolute Maximum Ratings (Ta = 25к,unless otherwise specified)
Parameter
Symbol
Ratings
Unit
Collector to Base Voltage
VCBO
-40
V
Collector to Emitter Voltage
VCEO
-25
V
Emitter to Base Voltage
VEBO
-6
V
Collect Current
IC
-1.5
A
Base Current
IB
-0.5
A
Junction Temperature
Tj
+150
ć
Storage Temperature Range
TsTG
-55 ~ +150
ć
Total Power Dissipation
PD
1
W
Electrical Characteristics(Ta = 25к,unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
-40
-
-
V
IC=-100uA
BVCEO
-25
-
-
V
IC=-2mA
BVEBO
-6
-
-
V
IE=-100uA
ICBO
-
-
-100
nA
VCB=-35V
IEBO
-
-
-100
nA
VBE=-6V
*VCE(sat)
-
-
-0.5
V
lC=-800mA, IB=-80mA
*VBE(sat)
-
-
-1.2
V
lC=-800mA, IB=-80mA
*VBE(on)
-
-
-1
V
VCE=-1V, IC=-10mA
*hFE1
45
-
-
VCE=-1V, IC=-5mA
*hFE2
120
-
500
VCE=-1V, IC=-100mA
*hFE3
40
-
-
VCE=-1V, IC=-800mA
fT
100
-
-
MHz
VCE=-10V, IC=-50mA, f=100MHz
Cob
-
9
-
pF
VCB=-10V, IE=0, f=1MHz
* Pulse Test: Pulse WidthЉ380 s, Duty CycleЉ2%
Classification Of hFE2
Rank
C
Range
120 ~ 200
D
160 ~ 320
E
250 ~ 500
G8550
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