G8050 Datasheet, PDF (1/2 Pages) GTM CORPORATION – NPN EPITAXIAL TRANSISTOR

CORPORATION ISSUED DATE :2004/12/27
REVISED DATE :
G8050
NPN EPITAXIAL TRANSISTOR
Description
The G8050 is designed for use in 2W output amplifier of portable radios in class B push-pull operation.
Features
*High Collector current (IC: 1.5A)
*Complementary to G8550
Package Dimensions
D
E
S1
TO-92
b1
S E A T IN G
PLANE
C
e1
b
e
REF.
A
S1
b
b1
C
Millimeter
Min. Max.
4.45 4.7
1.02
-
0.36 0.51
0.36 0.76
0.36 0.51
REF.
D
E
L
e1
e
Millimeter
Min. Max.
4.44 4.7
3.30 3.81
12.70 -
1.150 1.390
2.42 2.66
Absolute Maximum Ratings (Ta = 25к,unless otherwise specified)
Parameter
Symbol
Ratings
Unit
Collector to Base Voltage
VCBO
40
V
Collector to Emitter Voltage
VCEO
25
V
Emitter to Base Voltage
VEBO
6
V
Collect Current
IC
1.5
A
Base Current
IB
0.5
A
Junction Temperature
Tj
+150
ć
Storage Temperature Range
TsTG
-55 ~ +150
ć
Total Power Dissipation
PD
1
W
Electrical Characteristics(Ta = 25к,unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
40
-
-
V
IC=100uA
BVCEO
25
-
-
V
IC=2mA
BVEBO
6
-
-
V
IE=100uA
ICBO
-
-
100
nA
VCB=35V
IEBO
-
-
100
nA
VBE=6V
*VCE(sat)
-
-
0.5
V
lC=800mA, IB=80mA
*VBE(sat)
-
-
1.2
V
lC=800mA, IB=80mA
*VBE(on)
-
-
1
V
VCE=1V, IC=10mA
*hFE1
45
-
-
VCE=1V, IC=5mA
*hFE2
120
-
500
VCE=1V, IC=100mA
*hFE3
40
-
-
VCE=1V, IC=800mA
fT
100
-
-
MHz
VCE=10V, IC=50mA, f=100MHz
Cob
-
9
-
pF
VCB=10V, IE=0, f=1MHz
* Pulse Test: Pulse WidthЉ380 s, Duty CycleЉ2%
Classification Of hFE2
Rank
C
Range
120 ~ 200
D
160 ~ 320
E
250 ~ 500
G8050
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