G6718 Datasheet, PDF (1/2 Pages) GTM CORPORATION – NPN EPITAXIAL PLANAR TRANSISTOR

ISSUED DATE :2005/09/05
REVISED DATE :
G6718
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The G6718 is designed for general purpose medium power amplifier and switching applications.
Features
Ô¦High Power: 850mW
Ô¦High Current: 1A
Package Dimensions
D
E
S1
TO-92
b1
S E A T IN G
PLANE
C
e1
b
e
Absolute Maximum Ratings (TA=25к)
Parameter
Symbol
Collector to Base Voltage
VCBO
Collector to Emitter Voltage
VCEO
Emitter to Base Voltage
VEBO
Collector Current (DC)
IC
Collector Current (Pulse)
IC
Base Current
IB
Total Device Dissipation
PD
Junction Temperature
TJ
Storage Temperature
Tstg
REF.
A
S1
b
b1
C
Millimeter
Min. Max.
4.45
4.7
1.02
-
0.36
0.51
0.36
0.76
0.36
0.51
REF.
D
E
L
e1
e
Millimeter
Min.
Max.
4.44
4.7
3.30
3.81
12.70
-
1.150 1.390
2.42
2.66
Ratings
Unit
100
V
100
V
5
V
1
A
2
A
200
mA
850
mW
150
к
-55 ~ +150
к
Electrical Characteristics (TA = 25к unless otherwise noted)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
100
-
-
V
IC=100uA, IE=0
BVCEO
100
-
-
V
IC=1mA, IB=0
BVEBO
5
-
-
V
IE=10uA, IC=0
ICBO
-
-
100
nA
VCB=80V, IE=0
*VCE(sat)
-
-
350
mV IC=350mA, IB=35mA
*hFE1
80
-
-
VCE=1V, IC=50mA
*hFE2
50
-
300
VCE=1V, IC=250mA
*hFE3
20
-
-
VCE=1V, IC=500mA
fT
50
-
-
MHz VCE=10V, IE=50mA, f=100MHz
Cob
-
-
20
pF
VCB=10V, IE=0, f=1MHz
*Pulse Test: Pulse WidthЉ380 s, Duty CycleЉ2%
Classification Of hFE2
Rank
Range
A
50 ~ 115
B
95 ~ 300
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