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G3018 Datasheet, PDF (1/4 Pages) GTM CORPORATION – N-CHANNEL MOSFET
G3018
N-CHANNEL MOSFET
Description
N-channel enhancement-mode MOSFET
Features
Ô¦Low on-resistance.
Ô¦Fast switching speed.
Ô¦Low voltage drive (2.5V) makes this device ideal for portable equipment.
Ô¦Easily designed drive circuits.
Ô¦Easy to parallel.
Package Dimensions
Pb Free Plating Product
ISSUED DATE :2005/11/30
REVISED DATE :
BVDSS
RDS(ON)
ID
30V
8
115mA
TPU.34)QBDLBHF*
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1,2
Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID @TA=25к
ID @TA=100к
IDM
PD @TA=25к
Tj, Tstg
Thermal Data
Parameter
Thermal Resistance Junction-ambient3 Max.
Symbol
Rthj-a
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.10
2.40 2.80
1.40 1.60
0.35 0.50
0
0.10
0.45 0.55
REF.
G
H
K
J
L
M
Ratings
30
f20
115
75
800
0.225
0.0018
-40 ~ +150
Ratings
556
Millimeter
Min.
Max.
1.90 REF.
1.00
1.30
0.10
0.20
0.40
-
0.85
1.15
0°
10°
Unit
V
V
mA
mA
mA
W
W/ć
ć
Unit
ć/W
G3018
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