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G2N7002 Datasheet, PDF (1/3 Pages) GTM CORPORATION – N-CHANNELTRANSISTOR
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G2N7002
N-CHANNEL TRANSISTOR
Description
N-channel enhancement-mode MOS TRANSISTOR
Package Dimensions
TPU.34)QBDLBHF*
Absolute Maximum Ratings at Ta = 25к
Parameter
Operating Junction and Storage Temperature Range
Drain-Source Voltage
Gate-Source Voltage
- Continuous
- Non-repetitive (tpЉ50us)
Continuous Drain Current
Ta=25ć(1)
Ta=100ć(1)
Pulsed Drain Current (Ta=25ć ) (2)
Power Dissipation
Ta=25ć
Ta=100ć
Thermal Resistance ,Junction-to-Ambient
Symbol
Tj, Tstg
VGS
VGSM
ID
IDM
PD
RthJA
Characteristics at Ta = 25к
Parameter
Drain-Source Breakdown Voltage
Symbol
BVDSS
Gate Threshold Voltage
VGS(th)
Gate Body Leakage Current
IGSS
Zero Gate Voltage Drain Current
Idss
On-State Drain Current
ID(ON)
Static Drain-Source on-State Resistance RDS(ON)
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
GFS
Ciss
Coss
Crss
Min.
60
1
-
-
500
-
-
-
-
80
-
-
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70
3.10
2.40
2.80
1.40
1.60
0.35
0.50
0
0.10
0.45
0.55
REF.
G
H
K
J
L
M
Millimeter
Min.
Max.
1.90 REF.
1.00
1.30
0.10
0.20
0.40
-
0.85
1.15
0̓
10̓
Ratings
-55 ~ +150
60
f20
f40
115
73
800
0.2
0.08
625
Unit
ć
V
V
V
mA
mA
W
ć/W
Max.
-
2.5
̈́100
1
-
7.5
13.5
7.5
13.5
-
50
25
5
Unit
V
V
nA
uA
mA
Ó¨
mS
pF
pF
pF
Test Conditions
VGS=0, ID=10uA
VDS=2.5V, ID=0.25mA
VGS=f20V, VDS=0
VDS=60V, VGS=0
VDS =7.5V ,VGS=10V
Id=50mA, VGS=5V
25ć
125ć
Id=500mA, VGS=10V
25ć
125ć
VDS>2 VDS(ON), ID=200mA
VDS=25V, VGS=0V, f=1MHz