G2N5401 Datasheet, PDF (1/3 Pages) GTM CORPORATION – PNP EPITAXIAL PLANAR TRANSISTOR

CORPORATION ISSUED DATE :2004/06/09
REVISED DATE :2004/11/29B
G2N5401
PNP EPITAXIAL PLANAR TANSISTOR
Description
The G2N5401 is designed for general purpose applications requiring high breakdown voltages.
Features
*Complementary to NPN Type G2N5551
*High Collector-Emitter Breakdown Voltage (VCEO=150V@IC=1mA))
Package Dimensions
D
E
S1
TO-92
b1
S E A T IN G
PLANE
C
e1
b
e
Absolute Maximum Ratings at Ta = 25к
Parameter
Symbol
Junction Temperature
Tj
Storage Temperature
Tstg
Collector to Base Voltage
VCBO
Collector to Emitter Voltage
VCEO
Emitter to Base Voltage
VEBO
Collector Current
IC
Total Power Dissipation
PD
Characteristics at Ta = 25к
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)1
*VCE(sat)2
*VBE(sat)1
*VBE(sat)2
*hFE1
*hFE2
*hFE3
fT
Cob
Min.
-160
-150
-5
-
-
-
-
-
-
50
80
50
100
-
Typ.
-
-
-
-
-
-
-
-
-
-
160
-
-
-
Max.
-
-
-
-50
-50
-0.2
-0.5
-1
-1
-
400
-
300
6
Unit
V
V
V
nA
nA
V
mV
V
V
MHz
pF
Classification Of hFE2
Rank
Range
A
80-200
N
100-240
C
160-400
REF.
A
S1
b
b1
C
Millimeter
Min. Max.
4.45 4.7
1.02
-
0.36 0.51
0.36 0.76
0.36 0.51
REF.
D
E
L
e1
e
Millimeter
Min. Max.
4.44 4.7
3.30 3.81
12.70 -
1.150 1.390
2.42 2.66
Ratings
Unit
+150
ć
-55 ~ +150
ć
-160
V
-150
V
-5
V
-600
mA
625
mW
Test Conditions
IC=-100uA,IE=0
IC=-1mA,IB=0
IE=-10uA,IC=0
VCB=-120V, IE=0
VEB=-3V, IC=0
IC=-10mA, IB=-1mA
IC=-50mA, IB=-5mA
IC=-10mA, IB=-1mA
IC=-50mA, IB=-5mA
VCE=-5V, IB=-1mA
VCE=-5V, IC=-10mA
VCE=-5V, IC=-50mA
VCE=-10V, IC=-10mA, f=100MHz
VCB=-10V, f=1MHz, IE=0
* Pulse Test: Pulse WidthЉ380us, Duty CycleЉ2%
G2N5401
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