English
Language : 

G2N3906 Datasheet, PDF (1/2 Pages) GTM CORPORATION – PNP EPITAXIAL PLANAR TRANSISTOR
CORPORATION ISSUED DATE :2004/08/31
REVISED DATE :2005/06/24C
G2N3906
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The G2N3906 is designed for general purpose switching and amplifier applications.
Features
*Pb-free package are available
*Collector-Emitter Voltage: VCEO=-40V
*Collect Dissipation: Pc (max) =625mW
*Complementary to G2N3904
Package Dimensions
D
E
S1
TO-92
b1
S E A T IN G
PLANE
C
e1
b
e
REF.
A
S1
b
b1
C
Millimeter
Min. Max.
4.45
4.7
1.02
-
0.36
0.51
0.36
0.76
0.36
0.51
REF.
D
E
L
e1
e
Millimeter
Min.
Max.
4.44
4.7
3.30
3.81
12.70
-
1.150 1.390
2.42
2.66
Absolute Maximum Ratings (Ta = 25к,unless otherwise specified)
Parameter
Symbol
Ratings
Unit
Collector to Base Voltage
VCBO
-40
V
Collector to Emitter Voltage
VCEO
-40
V
Emitter to Base Voltage
VEBO
-5
V
Collect Current(DC)
IC
-200
mA
Junction Temperature
Tj
+150
ć
Storage Temperature Range
TsTG
-55 ~ +150
ć
Total Power Dissipation
PD
625
mW
Electrical Characteristics(Ta = 25к,unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
-40
-
-
V
IC=-10uA , IE=0
BVCEO
-40
-
-
V
IC=-1mA , IB=0
BVEBO
-5
-
-
V
IE=-10uA, IC=0
ICEX
-
-
-50
nA
VCE=-30V, VEB=-3V
IEBO
-
-
-50
nA
VEB=-3V
VCE(sat)1
-
-
-0.25
V
IC=-10mA, IB=-1mA
VCE(sat)2
-
-
-0.4
V
IC=-50mA, IB=-5mA
VBE(sat)1
-0.65
-
-0.85
V
IC=-10mA, IB=-1mA
VBE(sat)2
-
-
-0.95
V
IC=-50mA, IB=-5mA
hFE1
60
-
-
VCE=-1V, IC=-0.1mA
hFE2
80
-
-
VCE=-1V, IC=-1mA
hFE3
100
-
300
VCE=-1V, IC=-10mA
hFE4
60
-
-
VCE=-1V, IC=-50mA
hFE5
30
-
-
VCE=-1V, IC=-100mA
fT
250
-
-
MHz VCE=-20V, IE=-10mA, f=100MHz
Cob
-
-
4.5
pF
VCB=-10V, f=100KHz
Cib
-
-
10
pF
VEB=-0.5V, f=100KHz
td
-
-
35
ns
VCC=-3V, VBE(OFF)=-0.5V, IC=-10mA, IB1=-1mA
tr
-
-
35
ns
VCC=-3V, VBE(OFF)=-0.5V, IC=-10mA, IB1=-1mA
tstg
-
-
225
ns
VCC=-3V, IC=-10mA, IB1=-IB2=-1mA
tf
-
-
75
ns
VCC=-3V, IC=-10mA, IB1=-IB2=-1mA
G2N3906
Page: 1/2