G1270 Datasheet, PDF (1/2 Pages) GTM CORPORATION – NPN EPITAXIAL PLANAR TRANSISTOR

ISSUED DATE :2005/08/01
REVISED DATE :
G1270
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The G1270 is designed for general purpose switching and amplifier applications.
Features
Ô¦Excellent hFE(2)=25(Min.) @ VCE=-6V, IC=-400mA
Package Dimensions
D
E
S1
TO-92
b1
S E A T IN G
PLANE
C
e1
b
e
Absolute Maximum Ratings (TA=25к)
Parameter
Symbol
Collector to Base Voltage
VCBO
Collector to Emitter Voltage
VCEO
Emitter to Base Voltage
VEBO
Collector Current (DC)
IC
Total Device Dissipation
PD
Junction Temperature
TJ
Storage Temperature
Tstg
REF.
A
S1
b
b1
C
Millimeter
Min. Max.
4.45
4.7
1.02
-
0.36
0.51
0.36
0.76
0.36
0.51
REF.
D
E
L
e1
e
Millimeter
Min.
Max.
4.44
4.7
3.30
3.81
12.70
-
1.150 1.390
2.42
2.66
Ratings
Unit
-35
V
-30
V
-5
V
-500
mA
625
mW
150
к
-55 ~ +150
к
Electrical Characteristics (TA = 25к unless otherwise noted)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
-35
-
-
V
IC=-100uA, IE=0
BVCEO
-30
-
-
V
IC=-1mA, IB=0
BVEBO
ICBO
IEBO
*VCE(sat)
-5
-
-
V
IE=-100uA, IC=0
-
-
-100
nA
VCB=-35V, IE=0
-
-
-100
nA
VEB=-5V, IC=0
-
-
-0.25
V
IC=-100mA, IB=-10mA
*VBE(on)
-
-
-1.0
V
VCE=-1V, IC=-100mA
*hFE1
70
-
240
VCE=-1V, IC=-100mA
*hFE2
25
-
-
VCE=-6V, IC=-400mA
fT
100
-
-
MHz VCE=-1V, IC=-10mA, f=100MHz
Cob
-
-
8
pF
VCB=-10V, IE=0, f=1MHz
*Pulse Test: Pulse WidthЉ380 s, Duty CycleЉ2%
Classification Of hFE
Rank
hFE1 Range
hFE2 Range
O
70 - 140
Min. 25
Y
120 - 240
Min. 40
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