S8050A Datasheet, PDF (2/2 Pages) Guilin Strong Micro-Electronics Co., Ltd. – Low Frequency Power Amplifier

桂林斯壯微電子有限責任公司
Guilin Strong Micro-Electronics Co.,Ltd.
S8050A
■ELECTRICAL CHARACTERISTICS 電特性
(TA=25℃ unless otherwise noted 如無特殊說明，溫度爲 25℃)
Characterstic
特性參數
Symbol
符號
Test Condition
測試條件
Min. Typ. Max. Unit
最小值 典型值 最大值 單位
Collector Cutoff Current
集電極截止電流
Emitter Cutoff Current
發射極截止電流
ICBO
VCB=30V,IE=0
—
—
0.1 μA
IEBO
VEB=5V,IC=0
—
—
0.1 μA
Collector-Base Breakdown Voltage
集電極-基極擊穿電壓
V(BR)CBO
IC=100μA
40
—
—
V
Collector-Emitter Breakdown Voltage
集電極-發射極擊穿電壓
V(BR)CEO
IC=10mA
25
—
—
V
Emitter-Base Breakdown Voltage
發射極-基極擊穿電壓
V(BR)EBO
IE=100μA
5
—
—
V
DC Current Gain
直流電流增益
Collector-Emitter Saturation Voltage
集電極-發射極飽和壓降
HFE(1)
HFE(2)
VCE(sat)
VCE=1V,
IC=50mA
VCE=1V,
Ic=500mA
IC=500mA,
IB=50mA
85
—
400
—
30
—
—
—
—
0.6
V
Base-Emitter Saturation Voltage
基極-發射極飽和壓降
VBE(sat)
IC=500mA,
IB=50mA
—
—
1.2
V
Base-Emitter Voltage
基極-發射極電壓
VBE
Transition Frequency
特徵頻率
fT
Collector Output Capacitance
輸出電容
Cob
VCE=1V,
IC=10mA
VCE=5V,
IC=10mA
VCB=10V,IE=0,
f=1MHz
—
0.8
1.0
V
100
120
— MHz
—
13
30
pF