MMBTH10 Datasheet, PDF (2/3 Pages) Diodes Incorporated – NPN SURFACE MOUNT VHF/UHF TRANSISTOR

MMBTH10
桂林斯壯微電子有限責任公司
Guilin Strong Micro-Electronics Co.,Ltd.
■ELECTRICAL CHARACTERISTICS 電特性
(T_A=25℃ unless otherwise noted 如無特殊說明，溫度爲 25℃)
Characteristic
特性參數
Emitter Cutoff Current
發射極截止電流(V_EB=2.0v,IC=0)
Collector Cutoff Current
集電極截止電流(V_CB=25v,IE=0)
Collector-Base Breakdown Voltage
集電極基極擊穿電壓(Ic=100uA)
Symbol
Min
Typ
Max Unit
符號 最小值 典型值 最大值 單位
I_EBO
—
—
100
nA
I_CBO
—
—
100
nA
V(BR)CBO
30
—
—
V
Collector-Emitter Breakdown Voltage
集電極發射極擊穿電壓(Ic=1mA)
V(BR)CEO
25
—
—
V
Emitter-Base Breakdown Voltage
發射極基極擊穿電壓(IE=10uA)
V(BR)EBO
3
—
—
V
Collector Saturation Voltage
集電極飽和壓降(Ic=4mAdc,I_B=0.4mA) ^VCE(sat)
—
—
0.5
Vdc
DC Current Gain 直流電流增益
(V_CE=10v,IC=4mA)
HFE
60
—
—
Gain Bandwidth Product
增益帶寬乘積(V_CE=10v,IC=4mA)
f_T
650
—
—
MHz
Output Capacitance 輸出電容
(V_CB=10v,IE=0,f=1.0MHz)
C_ob
—
—
0.7
pF
1. FR-5=1.0×0.75×0.062in.
2. Alumina=0.4×0.3×0.024in.99.5%alumina.