GMS2302 Datasheet, PDF (2/3 Pages) Guilin Strong Micro-Electronics Co., Ltd. – N-Channel Enhancement-Mode MOSFETs

GMS2302
桂林斯壯微電子有限責任公司
Guilin Strong Micro-Electronics Co.,Ltd.
■ELECTRICAL CHARACTERISTICS 電特性
(T_A=25℃ unless otherwise noted 如無特殊說明，溫度爲 25℃)
Characteristic
特性參數
Symbol Min
符號 最小值
Typ
典型值
Max
最大值
Drain-Source Breakdown Voltage
漏極-源極擊穿電壓(I_D = 250uA,V_GS=0V) ^BVDSS
16
Gate Threshold Voltage
栅極開启電壓(I_D = 250uA,V_GS= V_DS)
V_GS(th) 0.4
Drain-Source On Voltage
漏極-源極導通電壓(I_D= 50mA,V_GS= 5V)
V_DS(ON)
—
(I_D = 500mA,V_GS= 10V)
—
—
—
1.2
— 0.375
3.75
Diode Forward Voltage Drop
内附二極管正向壓降(I_S= 0.75A,V_GS=0V)
V_SD
—
Zero Gate Voltage Drain Current
零栅壓漏極電流(V_GS=0V, V_DS= 12V)
(V_GS=0V, V_DS= 12V, T_A=55℃)
I_DSS
—
Gate Body Leakage
栅極漏電流(V_GS=+8V, V_DS=0V)
I_GSS
—
Static Drain-Source On-State Resistance
静态漏源導通電阻(I_D=3A,V_GS=4.5V)
(I_D=2A,V_GS=2.5V)
Input Capacitance 輸入電容
(V_GS=0V, V_DS= 6V,f=1MHz)
R_DS(ON)
—
C_ISS
—
Common Source Output Capacitance
共源輸出電容(V_GS=0V, V_DS= 6V,f=1MHz)
C_OSS
—
Turn-ON Time 开启時間
(V_DS= 6V, I_D= 1A, R_GEN=6Ω)
t_(on)
—
—
1.2
—
1
10
—
+100
—
0.09
0.13
—
880
—
270
—
20
Turn-OFF Time 关断時間
(V_DS= 6V, I_D= 1A, R_GEN=6Ω)
t_(off)
—
—
65
Unit
單位
V
V
V
V
uA
nA
Ω
pF
pF
ns
ns
Pulse Width<300μs; Duty Cycle<2.0%