GMP80N75 Datasheet, PDF (2/2 Pages) Guilin Strong Micro-Electronics Co., Ltd. – N-channel 75V 10mΩ, 80A TO-220 Trench Power MOSFET

桂林斯壯微電子有限責任公司
Guilin Strong Micro-Electronics Co.,Ltd.
▉Electerical Characteristics 電特性
GMP80N75
(TA=25℃ unless otherwise noted 如無特殊說明，溫度爲 25℃)
Characteristic
特性參數
Symbol
符號
Min
最小值
Drain-Source Breakdown Voltage
漏極-源極擊穿電壓(ID =250uA,V_GS=0V)
BV_DSS
75
Gate Threshold Voltage
栅極開启電壓(ID =250uA,V_GS= V_DS)
V_GS(th)
2
Zero Gate Voltage Drain Current
零栅壓漏極電流(V_GS=0V, V_DS= 75V)
I_DSS
—
Gate Body Leakage
栅極漏電流(V_GS=+25V, V_DS=0V)
I_GSS
—
Static Drain-Source On-State Resistance
静态漏源導通電阻(ID=40A,V_GS=10V)
R_DS(ON)
—
Source Drain Current
源極-漏極電流
I_SD
—
Source Drain Current (pulsed)
源極-漏極電流(脉冲)
I_SDM
—
Diode Forward Voltage Drop
内附二極管正向壓降(ISD=40A,V_GS=0V)
V_SD
—
Input Capacitance 輸入電容
(V_GS=0V, V_DS=20V,f=1MHz)
C_ISS
—
Common Source Output Capacitance
共源輸出電容(VGS=0V, VDS=20V,f=1MHz)
C_OSS
—
Gate Source Charge 栅源電荷密度
(V_DS=60V, I_D=75A, V_GS=4.5V)
Q_gs
—
Gate Drain Charge 栅漏電荷密度
(V_DS=60V, I_D=75A, V_GS=4.5V)
Q_gd
—
Turn-ON Time 開启時間
(V_DS=30V, I_D=45A, R_GEN=4.7Ω,V_GS=10V)
t_(on)
—
Turn-OFF Time 關断時間
(V_DS=30V, I_D=45A, R_GEN=4.7Ω,V_GS=10V)
t_(off)
—
Typ
典型值
—
—
—
—
8
—
—
—
—
—
36
50
60
159
Max
最大值
—
4
1
+100
10
75
380
1.2
6200
437
—
—
—
—
Unit
單位
V
V
uA
nA
mΩ
A
A
V
pF
pF
nC
nC
ns
ns