GMC3875S Datasheet, PDF (2/2 Pages) Guilin Strong Micro-Electronics Co., Ltd. – NPN General Purpose Transistor

桂林斯壯微電子有限責任公司
Guilin Strong Micro-Electronics Co.,Ltd.
GMC3875S
■ELECTRICAL CHARACTERISTICS 電特性
(TA=25℃ unless otherwise noted 如無特殊說明,溫度爲 25℃)
Characteristic
特性參數
Symbol Test Condition Min Typ Max Unit
符號 測試條件 最小值 典型值 最大值 單位
Collector Cutoff Current
集電極截止電流
Emitter Cutoff Current
發射極截止電流
ICBO
VCB=60V,
IE=0
—
—
0.1 μA
IEBO
VEB=5V,
IC=0
—
—
0.1 μA
Collector-Base Breakdown Voltage
集電極-基極擊穿電壓
V(BR)CBO
IC=100μA
60
—
—
V
Collector-Emitter Breakdown Voltage
集電極-發射極擊穿電壓
V(BR)CEO IC=1.0mA
50
Emitter-Base Breakdown Voltage
發射極-基極擊穿電壓
V(BR)EBO IE=100μA
5
DC Current Gain
直流電流增益
HFE
VCE=6V,
IC=2mA
70
Collector-Emitter Saturation Voltage
集電極-發射極飽和壓降
VCE(sat)
IC=100mA,
IB=10mA
—
Base-Emitter Saturation Voltage
基極-發射極飽和壓降
Noise Figure
噪声係數
Transition Frequency
特徵頻率
VBE(sat)
IC=100mA,
IB=10mA
—
V _CE=6V,
NF
Ic=0.1mA,
f=1kHz,
—
Rg=10kΩ
fT
VCE=10V,
IC=1mA
80
Collector Output Capacitance
輸出電容
Cob
VCB=10V,IE=0,
f=1MHz
—
—
—
V
—
—
V
— 700 —
0.1 0.25 V
—
1.0
V
1.0 10 dB
—
— MHz
2.0 3.5 pF