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GMC3265 Datasheet, PDF (2/2 Pages) Guilin Strong Micro-Electronics Co., Ltd. – NPN Low Frequency Amplifier Transistor | |||
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Guilin Strong Micro-Electronics Co.,Ltd.
GMC3265
â ELECTRICAL CHARACTERISTICS é»ç¹æ§
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Characteristic
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Symbol Test Condition Min Typ Max Unit
符è 測試æ¢ä»¶ æå°å¼ å
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Collector Cutoff Current
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Emitter Cutoff Current
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ICBO
VCB=35V,
IE=0
â
â
0.1 μA
IEBO
VEB=5V,
IC=0
â
â
0.1 μA
Collector-Base Breakdown Voltage
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V(BR)CBO
IC=100μA
35
â
â
V
Collector-Emitter Breakdown Voltage
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V(BR)CEO IC=1.0mA
30
â
â
V
Emitter-Base Breakdown Votlage
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V(BR)EBO IE=100μA
5
â
â
V
DC Current Gain
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HFE1
VCE=1V,
IC=100mA
100
â
320 â
DC Current Gain
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HFE2
VCE=1V,
IC=800mA
40
â
â
â
Collector-Emitter Saturation Voltage
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VCE(sat)
IC=500mA,
IB=20mA
â
â
0.5
V
Base-Emitter Saturation Voltage
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VBE(sat)
IC=800mA,
IB=80mA
â
â
1.2
V
Base-Emitter Saturation
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VBE
VCE=1V,
IC=10mA
0.5
â
0.8
V
Transition Frequency
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fT
VCE=5V,
IC=10mA
â
120
â MHz
Collector Output Capacitance
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Cob
VCB=10V,IE=0,
f=1MHz
â
13
â
pF
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