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GMBTA92 Datasheet, PDF (2/3 Pages) GTM CORPORATION – PNP EPITAXIAL PLANAR TRANSISTOR | |||
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Guilin Strong Micro-Electronics Co.,Ltd.
GMBTA92(éå®åè MMBTA92) GMBTA93(éå®åè MMBTA93)
â ELECTRICAL CHARACTERISTICS é»ç¹æ§
(TA=25â unless otherwise noted å¦ç¡ç¹æ®èªªæï¼æº«åº¦ç² 25â)
Characteristic
ç¹æ§åæ¸
Symbol
Min
符è æå°å¼
Collector-Emitter Breakdown Voltage(3)
éé»æ¥µ-ç¼å°æ¥µæç©¿é»å£(Ic=-1.0mAdc,IB=0)
V(BR)CEO
GMBTA92
GMBTA93
-300
-200
Collector-Base Breakdown Voltage
éé»æ¥µ-åºæ¥µæç©¿é»å£(Ic=-100μAdc,IE=0)
V(BR)CBO
GMBTA92
GMBTA93
-300
-200
Emitter-Base Breakdown Voltage
ç¼å°æ¥µ-åºæ¥µæç©¿é»å£(IE=-10μAdc,Ic=0) V(BR)EBO -5.0
Emitter Cutoff Current ç¼å°æªæ¢é»æµ
(VEB=-3.0Vdc,Ic=0)
Collector Cutoff Current éé»æ¥µæªæ¢é»æµ
(VCB=-200Vdc,IE=0)
(VCB=-160Vdc,IE=0)
IEBO
__
ICBO
GMBTA92
â
GMBTA93
__
DC Current Gain ç´æµé»æµå¢ç
HFE
(Ic=-1.0mAdc,VCE=-10.0Vdc)
25
(Ic=-10mAdc,VCE=-10.0Vdc)
40
(Ic=-30mAdc,VCE=-10.0Vdc)
GMBTA92 25
GMBTA93 25
Collector-Emitter Saturation Voltage
éé»æ¥µ-ç¼å°æ¥µé£½åå£é
(Ic=-20mAdc, IB=-2.0mAdc)
VCE(sat)
GMBTA92
â
GMBTA93
â
Base-Emitter Saturation Voltage
åºæ¥µ-ç¼å°æ¥µé£½åå£é
(Ic=-20mAdc, IB=-2.0mAdc)
VBE(sat)
â
Current-Gain-Bandwidth Product
é»æµå¢ç-帶寬ä¹ç©
(Ic=-10mAdc,VCE=-20Vdc,f=100MHz)
fT
50
Collector-Base Capacitance 輸åºé»å®¹
(VCB=-20.0Vdc, IE=0, f=1.0MHz)
Ccb
GMBTA92 â
GMBTA93 __
ï¼ï¼FR-5=1.0Ã0.75Ã0.062in.
ï¼ï¼Alumina=0.4Ã0.3Ã0.024in.99.5%alumina.
ï¼ï¼Pulse Width<300us;Duty Cycle<2.0%.
Max
æ大å¼
â
â
â
__
â
-100
-250
-250
â
300
â
__
-0.5
-0.5
-0.9
__
6.0
8.0
Unit
å®ä½
Vdc
Vdc
Vdc
nAdc
nAdc
â
Vdc
Vdc
MHz
pF
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