GMBTA42 Datasheet, PDF (2/3 Pages) List of Unclassifed Manufacturers – NPN EPITAXIAL PLANAR TRANSISTOR

桂林斯壯微電子有限責任公司
Guilin Strong Micro-Electronics Co.,Ltd.
GMBTA42(销售型號 MMBTA42) GMBTA43(销售型號 MMBTA43)
■ELECTRICAL CHARACTERISTICS 電特性
(TA=25℃ unless otherwise noted 如無特殊說明，溫度爲 25℃)
Characteristic
特性參數
Symbol
符號
Min
最小值
Collector-Emitter Breakdown Voltage(3)
集電極-射極擊穿電壓(IC=1mAdc,I_B=0)
V_(BR)CEO
GMBTA42
300
GMBTA43
200
Collector-Base Breakdown Voltage
V_(BR)CBO
集電極-基極擊穿電壓(IC=100µAdc,IE=0)
GMBTA42
GMBTA43
300
200
Emitter-Base Breakdown Voltage
V_(BR)EBO
發射極-基極擊穿電壓(IE= 100µAdc ,IC=0)
6.0
Emitter Cutoff Current 發射極截止電流
I_EBO
(V_EB=6.0Vdc,I_c=0)
GMBTA42
—
(V_EB=4.0Vdc,I_c=0)
GMBTA43
__
Collector Cutoff Current 集電極截止電流
I_CBO
(V_CB=200Vdc,I_E=0)
(V_CB=160Vdc,I_E=0)
GMBTA42
—
GMBTA43
__
DC Current Gain 直流電流增益
HFE
(I_c=1.0mAdc,V_CE=10.0Vdc)
25
(I_c=10mAdc,V_CE=10.0Vdc)
40
(I_c=30mAdc,V_CE=10.0Vdc)
GMBTA42
40
GMBTA43
40
Collector-Emitter Saturation Voltage
集電極-發射極飽和壓降
(I_c=20mAdc, I_B=2.0mAdc)
V_CE(sat)
GMBTA42
—
GMBTA43
—
Base-Emitter Saturation Voltage
基極-發射極飽和壓降
(I_c=20mAdc, I_B=2.0mAdc)
V_BE(sat)
—
Current-Gain-Bandwidth Product
電流增益帶寬乘積
(I_c=10mAdc,V_CE=20Vdc,f=100MHz)
fT
50
Collector-Base Capacitance 輸出電容
(V_CB=20.0Vdc, I_E=0, f=1.0MHz)
Ccb
GMBTA42
—
GMBTA43
__
１．FR-5=1.0×0.75×0.062in.
２．Alumina=0.4×0.3×0.024in.99.5%alumina.
３．Pulse Width<300us;Duty Cycle<2.0%.
Max
最大值
—
—
—
__
—
100
100
100
100
—
300
—
__
0.5
0.5
0.9
__
3.0
4.0
Unit
單位
Vdc
Vdc
Vdc
nAdc
nAdc
—
Vdc
Vdc
MHz
pF