GMBT2907 Datasheet, PDF (2/4 Pages) Guilin Strong Micro-Electronics Co., Ltd. – PNP Switching Transistor

桂林斯壯微電子有限責任公司
Guilin Strong Micro-Electronics Co.,Ltd.
GMBT2907(销售型號 MMBT2907) GMBT2907A(销售型號 MMBT2907A)
■ELECTRICAL CHARACTERISTICS 電特性
(TA=25℃ unless otherwise noted 如無特殊說明，溫度爲 25℃)
Characteristic
特性參數
Symbol
符號
Min Max Unit
最小值 最大值 單位
Collector-Emitter Breakdown Voltage(3)
集電極-發射極擊穿電壓(Ic=-10mAdc,I_B=0)
Collector-Base Breakdown Voltage
集電極-基極擊穿電壓(Ic=-10μAdc,I_E=0)
Emitter-Base Breakdown Voltage
發射極-基極擊穿電壓(I_E=-10μAdc,Ic=0)
Collector Cutoff Current 集電極截止電流
(V_CE=-30Vdc, V_EB(Off)=-0.5Vdc)
Collector Cutoff Current 集電極截止電流
(V_CB=-50Vdc,I_E=0)
(V_CB=-50Vdc,I_E=0,TA=125℃)
Base Cutoff Current 基極截止電流
(V_CE=-30Vdc, V_EB(Off)=-0.5Vdc)
DC Current Gain 直流電流增益
(I_c=-0.1mAdc,V_CE=-10.0Vdc)
(I_c=-1.0mAdc,V_CE=-10.0Vdc)
(I_c=-10mAdc,V_CE=-10.0Vdc)
(I_c=-150mAdc,V_CE=-10.0Vdc)(3)
(I_c=-500mAdc,V_CE=-10.0Vdc)(3)
Collector-Emitter Saturation Voltage
集電極發射極飽和壓降
(I_c=-150mAdc, I_B=-15mAdc)
(I_c=-500mAdc, I_B=-50mAdc)
V_(BR)CEO GMBT2907 -30
GMBT2907A _-60
V_(BR)CBO
-60
V_(BR)EBO
-5.0
I_CEX
I_CBO
I_B
HFE
—
GMBT2907 —
GMBT2907A —
GMBT2907 —
GMBT2907A —
—
GMBT2907 35
GMBT2907A 75
GMBT2907 50
GMBT2907A 100
GMBT2907 75
GMBT2907A 100
100
GMBT2907 30
GMBT2907A 50
V_CE(sat)
—
—
—
Vdc
—
__ Vdc
— Vdc
-50 nAdc
-0.02
-0.01
-20.0
-10.0
μAdc
-50 nAdc
—
—
—
—
300
—
—
-0.4 Vdc
-1.6
Base-Emitter Saturation Voltage
基極發射極飽和壓降
(I_c=-150mAdc, I_B=-15mAdc)
(I_c=-500mAdc, I_B=-50mAdc)
V_BE(sat)
—
-1.3 _Vdc
—
-2.6