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GMB772 Datasheet, PDF (2/3 Pages) Guilin Strong Micro-Electronics Co., Ltd. – PNP Si transistor suited for the output stage of 3W audio amplifier, voltage regulator, DC-DC converter and relay driver
桂林斯壯微電子有限責任公司
Guilin Strong Micro-Electronics Co.,Ltd.
GMB772
■ELECTRICAL CHARACTERISTICS 電特性
(TA=25℃ unless otherwise noted 如無特殊說明,溫度爲 25℃)
Characterstic
特性參數
Symbol
符號
Test Condition
測試條件
Min
最小值
TYP Max Unit
典型值 最大值 單位
Collector Cutoff Current
集電極截止電流
ICBO
VCB=-30V,IE=0
—
— -1.0 μA
Emitter Cutoff Current
發射極截止電流
IEBO
VEB=-5V,IC=0
—
— -1.0 μA
Collector-Base Breakdown Voltage
集電極-基極擊穿電壓
V(BR)CBO
IC=-100μA
-40
—
—
V
Collector-Emitter Breakdown Voltage
集電極-發射極擊穿電壓
V(BR)CEO
Emitter-Base Breakdown Voltage
發射極-基極擊穿電壓
V(BR)EBO
IC=-10mA
IE=-100μA
-30
—
—
V
-5
—
—
V
DC Current Gain
直流電流增益
HFE(1)
VCE=-2V,IC=-20A
30
HFE(2)
VCE=-2V,IC=-1A
60
Collector Saturation Voltage
集電極飽和壓降
VCE(sat) IC=-2A, IB=-200mA
—
Base Saturation Voltage
基極飽和電壓
VBE(sat) IC=-2A, IB=-200mA
—
Transition Frequency
特徵頻率
fT
VCE=-5V,IC=-100mA —
Collector Output Capacitance
輸出電容
Cob
VCB=-10V,IE=0,f=1MHz —
■DEVICE MARKING 打標
—
—
—
— 400
— -0.5 V
— -2.0 V
80
— MHz
55
— pF
GM
B772
P
GM
B772
E
■HFE RANGE 放大倍數分檔
160-320 200~400
P
E